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參數(shù)資料
| 型號(hào)： | CR-15 |
| 英文描述： | GaAs MMIC VSAT Power Amplifier， 2W， 6.40-7.025 GHz |
| 中文描述： | 砷化鎵微波單片集成電路甚小孔徑終端功放，2W的，6.40-7.025 GHz的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | CR-15 |
GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz
AM42-0039
M/A-COM Division of AMP Incorporated
I
North America: Tel. (800) 366-2266, Fax (800) 618-8883
I
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
I
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Typical Bias Configuration
4,5,6,7
Absolute Maximum Ratings
Parameter
Input Power
V
DD
V
GG
V
DD
- V
GG
I
DD
Channel Temperature
Storage Temperature
1,2,3,4
Absolute Maximum
+23 dBm
+12 Volts
-3 Volts
12 Volts
1700 mA
-40°C to +85°C
-65°C to +150°C
1. Exceeding any one or a combination of these limits may cause
permanent damage.
2. Case Temperature (T
) = +25°C.
3. Nominal bias is obtained by first connecting -2 volts to pin 5 (V
GG
),
followed by connecting +9 volts to pin 10 (V
). Note sequence.
Adjust V
for a drain current of 1050 mA typical.
4. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
5. No dc supply voltage will appear at the RF ports.
6. The dc resistance at the input and output ports is a short circuit.
No voltage is allowed on these ports.
7. For optimum IP
performance, the V
DD
bypass capacitors should
be placed within 0.5 inches of the V
DD
leads.
Pin No.
1
2
3
4
5
6
7
8
9
10
Pin Name
N/C
GND
RF In
GND
V
GG
N/C
GND
RF Out
GND
V
DD
Description
No Connection
DC and RF Ground
RF Input
DC and RF Ground
Gate Supply
No Connection
DC and RF Ground
RF Output
DC and RF Ground
Drain Supply
Pin Configuration
AM42-0039
μ
F
3.3
μ
F
0.01
μ
F
1.0
3
RF IN
RF OUT
8
10
VDD
VGG
GND
2,4,7,9
5
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