- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378893 > CPH6616 (Sanyo Electric Co.,Ltd.) N-Channel Silicon MOSFET General-Purpose Switching Device PDF資料下載
參數(shù)資料
| 型號： | CPH6616 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | N溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | CPH6616 |
CPH6616
No.8107-4/4
A S O
1.0
2
2
3
5
7
2
3
5
7
3
2
5
7
10
0.1
0.01
2
3
5
5
3
7
2
3
5 7
2
3
5 7
Drain-to-Source Voltage, VDS -- V
0.01
0.1
1.0
10
2
IT07316
VGS -- Qg
IT07314
0
0
1
2
3
5
4
6
7
8
9
6
10
1
2
3
4
5
<10
μ
s
10
μ
s
1m
10m
Operation in this area
is limited by RDS(on).
ID=2.5A
°
C
IDP=10A
VDS=10V
ID=2.5A
D
Total Gate Charge, Qg -- nC
PD -- Ta
G
Ta=25
°
C
Single pulse
Mounted on a ceramic board (900mm
2
0.8mm) 1unit
IT07318
0
0
20
40
Ambient Temperature, Ta --
°
C
60
80
100
120
0.8
0.9
1.0
140
160
0.6
0.4
0.2
A
Mutdo eamcbad(0mm
2
08mm ui
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2004. Specifications and information herein are subject
to change without notice.
Note on usage : Since the CPH6616 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CPH6621 | P-Channel Silicon MOSFET General-Purpose Switching Device |
| CPH6622 | N-Channel Silicon MOSFET General-Purpose Switching Device |
| CPH6704 | CPH6704 |
| CPH6801 | P-Channel Silicon MOSFET+Schottky Barrier Diode for DC/DC Converter Applications(DC/DC變換器應(yīng)用的P溝道硅MOSFET+肖特基勢壘二極管) |
| CPT-182 | Surface Mountable Chip Photo-transistor CPT-182 Series |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPH6616-TL-E | 功能描述:MOSFET N-CH DUAL 30V 2.5A CPH6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| CPH6619 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |
| CPH6619-TL-E | 制造商:SANYO 功能描述:P+N 12V 2A CPH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SOT346 制造商:Sanyo 功能描述:0 |
| CPH6621 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| CPH6622 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。