參數(shù)資料
型號(hào): CPH6519
廠商: Sanyo Electric Co.,Ltd.
英文描述: NPN Epitaxial Planar Silicon Composite Transistors Low-Frequency General-Purpose Amplifier, Driver Applications
中文描述: 瑞展硅復(fù)合晶體管低頻通用放大器,驅(qū)動(dòng)器應(yīng)用
文件頁數(shù): 2/4頁
文件大小: 40K
代理商: CPH6519
CPH6519
No.7399-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Note : The specifications shown above are for each individual transistor.
fT
VCE=10V, IC=10mA
VCB=10V, f=1MHz
IC=50mA, IB=1mA
IC=50mA, IB=1mA
IC=10
μ
A, IE=0
IC=1mA, RBE=
IE=10
μ
A, IC=0
200
1.5
0.1
0.8
MHz
pF
V
V
V
V
V
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
0.5
1.1
60
50
15
Electrical Connection
1000
7
5
3
2
10000
7
5
3
2
7
2
3
Collector Current, IC -- mA
5
7
1.0
10
2
2
3
5
7100
hFE -- IC
ITR10568
100
40
60
80
20
0
0
0.2
0.6
0.4
0.8
1.0
IC -- VCE
IB=0
250
μ
A
200
μ
A
150
μ
A
100
μ
A
50
μ
A
ITR10565
VCE=5V
Ta=120
°
C
25
°
C
--40
°
C
120
80
100
60
40
20
0
0
0.2
0.4
0.6
0.8
1.2
1.0
IC -- VBE
ITR10567
T
°
C
2
°
C
-
°
C
VCE=5V
20
8
12
16
4
0
0
10
30
20
40
50
IC -- VCE
IB=0
9
μ
A
10
μ
A
8
μ
A
7
μ
A
6
μ
A
5
μ
A
4
μ
A
3
μ
A
2
μ
A
1
μ
A
ITR10566
From top
500
μ
A
450
μ
A
400
μ
A
350
μ
A
300
μ
A
Collector-to-Emitter Voltage, VCE -- V
C
Collector-to-Emitter Voltage, VCE -- V
C
Base-to-Emitter Voltage, VBE -- V
C
D
B1
E1
C2
C1
B2
E2
(Top view)
TR1
TR2
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