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參數資料
| 型號： | CPH6311 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關應用 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 30K |
| 代理商： | CPH6311 |
CPH6311
No.6794-1/4
Features
Low ON-state resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
--20
±
10
--5
--20
1.6
2.0
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)
Mounted on a FR4 board PW
≤
5S
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=
--
1mA, VGS=0
VDS=
--
20V, VGS=0
VGS=
±
8V, VDS=0
VDS=
--
10V, ID=
--
1mA
VDS=
--
10V, ID=
--
3A
ID=
--
3A, VGS=
--
4.5V
ID=
--
1A, VGS=
--
2.5V
--20
V
μ
A
μ
A
V
S
m
m
--1
±
10
--1.4
--0.4
5.8
8.5
32
46
Static Drain-to-Source On-State Resistance
42
60
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6794
CPH6311
Package Dimensions
unit : mm
2151A
[CPH6311]
D2500 TS IM TA-3168
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
0.05
0
0
0
1
0
0
0.95
1
2
3
6
5
4
2
0
2.9
0.15
0.4
Preliminary
相關PDF資料 |
PDF描述 |
|---|---|
| CPH6312 | High-Speed Switching Applications |
| CPH6313 | High-Speed Switching Applications |
| CPH6315 | High-Speed Switching Applications |
| CPH6320 | General-Purpose Switching Device Applications |
| CPH6332 | P-Channel Silicon MOSFET General-Purpose Switching Device |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CPH6311-TL-E | 功能描述:MOSFET P-CH 20V 5A CPH6 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| CPH6312 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Speed Switching Applications |
| CPH6312-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 5A SOT346 |
| CPH6313 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Speed Switching Applications |
| CPH6313-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 20V 4A SOT346 |
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