參數(shù)資料
型號: CPH5905
文件頁數(shù): 2/5頁
文件大?。?/td> 45K
代理商: CPH5905
CPH5902
No.6962-2/5
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[FET]
Gate-to-Drain Breakdown Voltage`
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
* : The CPH5902 is classified by IDSS as follows : (unit : mA)
Rank
G
IDSS
10.0 to 20.0
The specifications shown above are for each individual FET or transistor.
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
NF
IG=--10
μ
A, VDS=0
VGS=--10V, VDS=0
VDS=5V, ID=100
μ
A
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, Rg=1k
, ID=1mA, f=1kHz
--15
V
nA
V
mA
mS
pF
pF
dB
--1.0
--1.5
32.0*
--0.4
10.0*
--0.7
24
38
10.0
2.9
1.0
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10
μ
A, IE=0
IC=1mA, RBE=
IE=10
μ
A, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
0.1
0.1
400
μ
A
μ
A
135
200
1.7
0.08
0.8
MHz
pF
V
V
V
V
V
μ
s
μ
s
μ
s
0.4
1.0
55
50
6
0.15
0.75
0.20
H
16.0 to 32.0
Electrical Connection
(Top view)
Switching Time Test Circuit
B
S
C
G
E / D
VR
1k
VCC=20V
VBE= --5V
+
+
50
INPUT
OUTPUT
RL
2k
220
μ
F
470
μ
F
PC=20
μ
s
D.C.
1%
IB1
IB2
10IB1= --10IB2=IC=10mA
[FET]
[FET]
0
0
ID -- VDS
20
16
12
8
4
0.4
Drain-to-Source Voltage, VDS -- V
0.8
1.2
1.6
2.0
ITR10364
ID -- VDS
--0.1V
VGS=0
--0.2V
--0.3V
--0.4V
--0.5V
--0.6V
--0.7V
0
0
20
16
12
8
4
2
Drain-to-Source Voltage, VDS -- V
4
6
8
10
--0.1V
VGS=0
--0.2V
--0.3V
--0.4V
--0.5V
--0.6V
--0.7V
ITR10365
D
D
相關PDF資料
PDF描述
CPH6122
CPH6414
CPH6415
CPH6601
CPH6603
相關代理商/技術參數(shù)
參數(shù)描述
CPH5905_05 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
CPH5905_12 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifi er Applications
CPH5905G-TL-E 功能描述:JFET NCH J-FET+BIP NPN TR RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
CPH5905H-TL-E 功能描述:JFET NCH J-FET+BIP NPN TR RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
CPH6001 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amplifier Applications