參數(shù)資料
型號(hào): CPH5854
廠商: Sanyo Electric Co.,Ltd.
英文描述: MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
中文描述: MOSFET的:P溝道MOSFET的硅SBD智能交通:肖特基二極管通用開(kāi)關(guān)設(shè)備
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 60K
代理商: CPH5854
CPH5854
No. A0516-2/6
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGSS=
±
16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--500mA, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
IS=--2A, VGS=0V
--30
V
μ
A
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
--1
±
10
--2.6
--1.2
1.2
2.0
110
205
200
47
32
7.2
2.9
21
8.7
5.5
0.98
0.82
--0.85
Static Drain-to-Source On-State Resistance
145
290
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
--1.5
VR
VF1
VF2
IR
C
trr
IR=0.5mA
IF=0.7A
IF=1.0A
VR=16V
VR=10V, f=1MHz cycle
IF=IR=100mA, See specified Test Circuit.
30
V
V
V
μ
A
pF
ns
Forward Voltage
0.45
0.48
0.5
0.53
15
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
27
10
Package Dimensions
unit : mm (typ)
7017A-010
Electrical Connection
5
4
3
1
2
1 : Drain
2 : Cathode
3 : Anode
4 : Source
5 : Gate
Top view
1 : Drain
2 : Cathode
3 : Anode
4 : Source
5 : Gate
SANYO : CPH5
2
1
4
5
3
2.9
0.05
0.4
2
1
0
0
0
0
0
0.15
0.95
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