- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378893 > CPH5838 (Sanyo Electric Co.,Ltd.) General-Purpose Switching Device Applications PDF資料下載
參數(shù)資料
| 型號： | CPH5838 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | General-Purpose Switching Device Applications |
| 中文描述： | 通用開關(guān)器件應(yīng)用 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 61K |
| 代理商： | CPH5838 |
CPH5838
No.8235-2/6
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS=
±
8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--500mA
ID=--500mA, VGS=--4V
ID=--300mA, VGS=--2.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4V, ID=--1A
VDS=--10V, VGS=--4V, ID=--1A
VDS=--10V, VGS=--4V, ID=--1A
IS=--1A, VGS=0
--20
V
μ
A
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
--1
±
10
--1.4
--0.4
0.72
1.2
380
540
115
23
15
500
760
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
8
6
15
7
1.5
0.4
0.3
--0.89
--1.2
VR
VF1
VF2
IR
C
trr
Rth(j-a)
IR=1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz, cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (900mm
2
0.8mm)
15
V
V
V
μ
A
pF
ns
Forward Voltage
0.30
0.35
0.35
0.40
500
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
42
15
110
°
C / W
Package Dimensions
unit : mm
2171A
Electrical Connection
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
2.9
0.95
0.05
1
2
3
4
5
0
0
0
2
1
0
0
0
0.4
0.15
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CPH5852 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode |
| CPH5854 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5855 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5856 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5857 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPH5839 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| CPH5846 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5846-TL-E | 制造商:SANYO 功能描述:Pch+SBD 20V 1.5A CPH5 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH SCHOT DIODE SOT346 制造商:Sanyo 功能描述:0 |
| CPH5847 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5847-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SOT346 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。