參數(shù)資料
型號: CPH5612
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Silicon MOSFET General-Purpose Switching Device
中文描述: N溝道MOSFET的硅通用開關(guān)設(shè)備
文件頁數(shù): 2/4頁
文件大?。?/td> 50K
代理商: CPH5612
CPH5612
No.8180-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
Qgs
Qgd
VSD
VDS=50V, VGS=4V, ID=1A
VDS=50V, VGS=4V, ID=1A
VDS=50V, VGS=4V, ID=1A
IS=1A, VGS=0
4.4
1.2
0.8
0.82
nC
nC
nC
V
1.2
Package Dimensions
unit : mm
2168
Electrical Connection
Switching Time Test Circuit
0.5
1.5
1.0
2.0
2.5
3.0
0
0
0.2
0.6
0.3
0.4
0.8
0.9
0.7
0.5
0.3
0.1
1.0
0
0.9
1.0
0.6
0.7
0.8
0.5
0.4
0.2
Drain-to-Source Voltage, VDS -- V
0.1
ID -- VDS
25
V
30
V
IT08335
0
0.5
1.0
1.5
2.0
ID -- VGS
IT08336
VDS=10V
-
°
C
T7
°
C
2
°
C
20
V
15
V
6
V
40
V
1.
V
VGS=1.0V
D
Gate-to-Source Voltage, VGS -- V
D
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
1
0
0
2
0
2.9
0.05
0.4
0.95
0
0
0
0.15
0.4
1
2
3
4
5
PW=10
μ
s
D.C.
1%
P.G
50
G
S
D
ID=0.5A
RL=100
VDD=50V
VOUT
CPH5612
VIN
4V
0V
VIN
5
4
3
1
2
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
Top view
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