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參數(shù)資料
| 型號： | CPH5522 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications |
| 中文描述： | 進步黨/瑞展硅晶體管的大電流開關應用 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 65K |
| 代理商： | CPH5522 |
CPH5522
No. A0326-5/5
PS
IT11409
0.1
1.0
2
3
2
3
5
7
2
10
3
5
7
0.1
0.01
2
3
5
7
2
10
2
3
5
7
1.0
3
5
7
100ms
DCopeaion
1m
ICP=5A
IC=2A
10
μ
s
500
μ
s
[PNP / NPN]
1ms
A S O
Collector-to-Emitter Voltage, VCE -- V
C
PC -- Ta
Ambient Temperature, Ta --
°
C
C
[PNP / NPN]
IT11410
0
0
20
40
60
80
100
120
140
160
0.6
1.2
0.4
0.2
0.9
0.8
1.0
1.4
1unt
Ta=25
°
C
Single pulse
For PNP minus sign is omitted
Mounted on a ceramic board (600mm
2
0.8mm)
Mounted on a ceramic board (600mm
2
0.8mm)
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.
相關PDF資料 |
PDF描述 |
|---|---|
| CPH5601 | P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(超高速轉(zhuǎn)換應用的P溝道硅MOSFET) |
| CPH5602 | 30V N-Channel PowerTrench MOSFET |
| CPH5603 | Ultrahigh-Speed Switching Applications |
| CPH5604 | Ultrahigh-Speed Switching Applications |
| CPH5611 | N CHANNEL SILICON TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CPH5524-TL-E | 功能描述:兩極晶體管 - BJT HIGH-FREQUENCY AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CPH5541 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications |
| CPH5541-TL-E | 功能描述:兩極晶體管 - BJT BIP PNP+NPN 0.7A 30V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CPH5601 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| CPH5602 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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