參數(shù)資料
型號(hào): CPH3431
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Silicon MOSFET General-Purpose Switching Device
中文描述: N溝道MOSFET的硅通用開關(guān)設(shè)備
文件頁數(shù): 2/4頁
文件大小: 45K
代理商: CPH3431
CPH3431
No.8252-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
Qgs
Qgd
VSD
VDS=100V, VGS=10V, ID=600mA
VDS=100V, VGS=10V, ID=600mA
VDS=100V, VGS=10V, ID=600mA
IS=600mA, VGS=0V
7
1
nC
nC
nC
V
0.8
0.79
1.2
Package Dimensions
unit : mm
7015A-004
Switching Time Test Circuit
0.4
0.2
0.6
--60
--40
--20
0
20
40
60
80
100
120
160
140
0
5
10
15
RDS(on) -- VGS
IT09319
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.6
0
4
3
2
1
0
1.4
2.0
1.6
1.8
1.2
1.0
0.8
0.4
Drain-to-Source Voltage, VDS -- V
0.2
ID -- VDS
80V
60V
IT09317
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ID -- VGS
IT09318
RDS(on) -- Ta
IT09320
5
0
1
2
3
4
2.5V
VGS=2.0V
30
V
40
V
50
V
1.V
VDS=10V
2
°
C
-
°
C
T
°
C
Ta=25
°
C
ID=300mA
ID=300mA, VGS=10V
ID=300mA, VGS=4V
D
Gate-to-Source Voltage, VGS -- V
D
S
O
S
O
Ambient Temperature, Tc --
°
C
Gate-to-Source Voltage, VGS -- V
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
2.9
0.05
0.4
2
1
0
0
0
0
0
0.15
2
1
3
0.95
PW=10
μ
s
D.C.
1%
P.G
50
G
S
D
ID=300mA
RL=333
VDD=100V
VOUT
CPH3431
VIN
10V
0V
VIN
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