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參數(shù)資料
| 型號(hào)： | CPH3423 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | N溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 49K |
| 代理商： | CPH3423 |
CPH3423
No.7915-3/4
VGS -- Qg
A S O
SW Time -- ID
Ciss, Coss, Crss -- VDS
y
fs
-- ID
IF -- VSD
Drain Current, ID -- A
S
Drain Current, ID -- A
F
y
f
Diode Forward Voltage, VSD -- V
F
Drain-to-Source Voltage, VDS -- V
C
Total Gate Charge, Qg -- nC
PD -- Ta
G
Drain-to-Source Voltage, VDS -- V
D
Ambient Temperature, Ta --
°
C
A
IT07498
0
1
3
5
2
4
6
0
2
4
8
6
10
IT07497
7
1.0
10
5
3
2
3
2
5
IT07495
IT07493
0.1
1.0
2
3
5
2
3
5
7
0
5
10
15
20
25
30
10
100
7
5
5
3
2
3
2
7
IT07496
IT07494
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1.0
7
5
3
2
7
5
7
5
3
2
3
2
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
0.1
0.01
2 3
5 7
2 3
5 7
2 3
5 7
2 3
5 7
0.1
1.0
0.01
10
100
VGS=0
-5
°
C
2
°
C
T7
°
C
td(on)
td(off)
tf
tr
VDD=30V
VGS=10V
Ciss
Coss
Crss
f=1MHz
VDS=30V
ID=1.5A
IDP=6A
ID=1.5A
Operation in this
area is limited by RDS(on).
10
μ
s
1m
10m
DCoeain(T=5
°
C
)
0.01
0.1
0.1
1.0
2
3
5
7
2
3
5
7
2
3
5
5
1.0
7
5
3
2
3
2
VDS=10V
°
C
25
°
C
T=-25
°
C
0
0
20
40
0.2
0.4
0.6
0.8
1.0
1.2
60
80
100
120
140
160
IT07499
<10
μ
s
Ta=25
°
C
Single pulse
Mounted on a ceramic board (900mm
2
0.8mm)
Mounedonaceamcboad(900mm
2
08mm
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| CPH3425 | Ultrahigh-Speed Switching Applications |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPH3424 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| CPH3424-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 1.8A SOT346 制造商:ON Semiconductor 功能描述: |
| CPH3425 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| CPH3425-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 100V 0.5A SOT346 |
| CPH3427 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device |
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