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參數(shù)資料
| 型號(hào)： | CPC3720CTR |
| 廠商： | CLARE INC |
| 元件分類： | 小信號(hào)晶體管 |
| 中文描述： | 130 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-89, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 429K |
| 代理商： | CPC3720CTR |
www.clare.com
DS-CPC3720C-R00A.7
1
PRELIMINAR
Y
CPC3720C
N-Channel Depletion-Mode
Vertical DMOS FETs
Part #
Description
CPC3720C
SOT-89 (100/Tube)
CPC3720CTR
SOT-89 (2000/Reel)
BV
DSX/
BV
DGX
R
DS(ON)
(max)
I
DSS (min)
Package
350V
22
130mA
SOT-89
Applications
Features
Description
Ordering Information
Package Pinout
Ignition modules
Normally-on switches
Solid state relays
Converters
Telecommunications
Power supply
Depletion mode device offers low R
DS(ON) at cold
temperatures
Low on resistance 22 ohms max. at 25C
High input impedance
High breakdown voltage 350V
Low V
GS(off) voltage -1.6 to -3.9V
Small package size SOT-89
The CPC3720C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3720C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3720C offers a low 20 ohm maximum on-
state resistance at 25C.
The CPC3720C has a minimum breakdown voltage of
350V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
(SOT-89)
G
D
S
D
Switching Waveform
90%
10%
90%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF)
tF
tr
INPUT
OUTPUT
0V
VDD
Rgen
0V
-10V
90%
10%
90%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF)
tF
tr
INPUT
OUTPUT
0V
VDD
Rgen
0V
-10V
Test Circuit
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| CPC3730 | 制造商:CLARE 制造商全稱:Clare, Inc. 功能描述:N-Channel Depletion-Mode FET |
| CPC3730C | 功能描述:固態(tài)繼電器-PCB安裝 N Channel Depletion Mode FET, 250V SOT-89 RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT |
| CPC3730CTR | 功能描述:固態(tài)繼電器-PCB安裝 N Channel Depletion Mode FET, T/R, 250V SOT-89 RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT |
| CPC3816 | 制造商:Pentair Technical Products / Hoffman 功能描述:Side Panels for 38'' high White, fits 48.00x15.00, Steel |
| CPC3902CTR | 功能描述:MOSFET N-CH 250V TO-243AA 制造商:ixys integrated circuits division 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:250V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:- 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:0V 不同 Id 時(shí)的 Vgs（th）（最大值）:- Vgs（最大值）:±15V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:230pF @ 20V FET 功能:耗盡模式 功率耗散（最大值）:1.8W（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:2.5 歐姆 @ 300mA， 0V 工作溫度:125°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:SOT-89 封裝/外殼:TO-243AA 標(biāo)準(zhǔn)包裝:1,000 |
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