參數(shù)資料
型號(hào): COP8SGE7DWF8
廠(chǎng)商: National Semiconductor Corporation
英文描述: 8-Bit CMOS ROM Based and OTP Microcontrollers with 8k to 32k Memory, Two Comparators and USART
中文描述: 8位的CMOS基于ROM和OTP微控制器具有8K到32K的內(nèi)存,2個(gè)比較器和USART
文件頁(yè)數(shù): 7/62頁(yè)
文件大小: 913K
代理商: COP8SGE7DWF8
3.0 Electrical Characteristics
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 2)
Supply Voltage (V
CC
)
Voltage at Any Pin
Total Current into V
CC
Pin (Source)
7V
0.3V to V
CC
+0.3V
100 mA
Total Current out of
GND Pin (Sink)
Storage Temperature
Range
ESD Protection Level
110 mA
65C to +140C
2kV (Human Body
Model)
Note 2:
Absolute maximum ratings indicate limits beyond which damage to
the device may occur. DC and AC electrical specifications are not ensured
when operating the device at absolute maximum ratings.
DC Electrical Characteristics
40C
T
A
+85C unless otherwise specified.
Parameter
Operating Voltage
Power Supply Rise Time
V
CC
Start Voltage to Guarantee POR
Power Supply Ripple (Note 4)
Supply Current (Note 5)
CKI = 15 MHz
CKI = 10 MHz
CKI = 4 MHz
HALT Current (Note 6)
IDLE Current (Note 5)
CKI = 15 MHz
CKI = 10 MHz
CKI = 4 MHz
Input Levels (V
IH
, V
IL
)
RESET
Logic High
Logic Low
CKI, All Other Inputs
Logic High
Logic Low
Internal Bias Resistor for the
Crystal/Resonator Oscillator
CKI Resistance to V
CC
or GND when R/C
Oscillator is selected
Hi-Z Input Leakage
Input Pullup Current
G and L Port Input Hysteresis
Conditions
Min
2.7
10
0
Typ
Max
5.5
50 x 10
6
0.25
0.1 V
cc
Units
V
ns
V
V
Peak-to-Peak
V
CC
= 5.5V, t
C
= 0.67 μs
V
CC
= 5.5V, t
C
= 1 μs
V
CC
= 4.5V, t
C
= 2.5 μs
V
CC
= 5.5V, CKI = 0 MHz
9.0
6.0
2.1
10
mA
mA
mA
μA
<
4
V
CC
= 5.5V, t
C
= 0.67 μs
V
CC
= 5.5V, t
C
= 1 μs
V
CC
= 4.5V, t
C
= 2.5 μs
2.25
1.5
0.8
mA
mA
mA
0.8 V
cc
V
V
0.2 V
cc
0.7 V
cc
V
V
0.2 V
cc
2
0.5
1
M
V
CC
= 5.5V
5
8
11
k
V
CC
= 5.5V
V
CC
= 5.5V, V
IN
= 0V
V
CC
= 5.5V
2
40
+2
250
μA
μA
V
0.25 V
cc
C
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