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| 型號： | COP8SDR9HLQ8 |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout |
| 中文描述： | 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, QCC44 |
| 封裝： | LLP-44 |
| 文件頁數(shù)： | 15/80頁 |
| 文件大?。?/td> | 972K |
| 代理商： | COP8SDR9HLQ8 |
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8.0 Electrical Characteristics
DC Electrical Characteristics (40C
≤
T
A
≤
+125C)
(Continued)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
(Continued)
Parameter
Conditions
Min
Typ
Max
Units
Dual Clock Mode
CKI = 10 MHz, Low Speed OSC = 32 kHz
Low Speed Mode
Low Speed OSC = 32 kHz
Supply Current for BOR Feature
High Brownout Trip Level (BOR Enabled)
Input Levels (V
IH
, V
IL
)
Logic High
Logic Low
Internal Bias Resistor for the CKI
Crystal/Resonator Oscillator
Hi-Z Input Leakage
Input Pullup Current
Port Input Hysteresis
Output Current Levels
D Outputs
Source
Sink (Note 7)
All Others
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
TRI-STATE Leakage
Allowable Sink Current per Pin
Maximum Input Current without Latchup (Note 5)
RAM Retention Voltage, V
R
(in HALT Mode)
Input Capacitance
Load Capacitance on D2
Voltage on G6 to Force Execution from Boot
ROM(Note *NO TARGET FOR FNXref NS20196*)
G6 Rise Time to Force Execution from Boot ROM
Input Current on G6 when Input
>
V
CC
V
CC
= 5.5V, t
C
= 0.5 μs
2.7
mA
V
CC
= 5.5V
V
CC
= 5.5V
30
70
45
4.5
μA
μA
V
4.17
4.28
0.8 V
CC
V
V
0.16 V
CC
0.3
1.0
2.5
M
V
CC
= 5.5V
V
CC
= 5.5V, V
IN
= 0V
3
40
+3
250
μA
μA
V
0.25 V
CC
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 4.5V, V
OL
= 1.0V
6.3
9
mA
mA
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 4.5V, V
OL
= 1.0V
V
CC
= 5.5V
9
6.3
9
3
μA
mA
mA
μA
mA
mA
V
pF
pF
+3
1
±
200
2.0
7
1000
G6 rise time must be slower than
100 ns
2 x V
CC
V
CC
+ 7
V
100
nS
μA
V
IN
= 11V, V
CC
= 5.5V
500
AC Electrical Characteristics (40C
≤
T
A
≤
+125C)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Instruction Cycle Time (t
C
)
Crystal/Resonator
Output Propagation Delay
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t
UWS
)
MICROWIRE/PLUS Hold Time (t
UWH
)
MICROWIRE/PLUS Output Propagation
Delay (t
UPD
)
Input Pulse Width
Interrupt Input High Time
4.5V
≤
V
CC
≤
5.5V
R
L
=2.2k, C
L
= 100 pF
0.5
DC
μs
2
MHz
20
20
ns
ns
150
ns
1
t
C
C
www.national.com
15
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| COP8SDR9HVA7 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout |
| COP8SDR9HVA8 | 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| COP8SDR9HVA8 63SN | 制造商:National Semiconductor 功能描述:MCU 8-bit COP8 CISC 32KB Flash 3.3V/5V 44-Pin PLCC Rail |
| COP8SDR9HVA8/63SN | 功能描述:閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| COP8SDR9HVA8/NOPB | 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
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