參數(shù)資料
型號(hào): COP8SCR9IMT8
廠(chǎng)商: NATIONAL SEMICONDUCTOR CORP
元件分類(lèi): 微控制器/微處理器
英文描述: 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
中文描述: 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO48
封裝: TSSOP-48
文件頁(yè)數(shù): 13/80頁(yè)
文件大?。?/td> 972K
代理商: COP8SCR9IMT8
8.0 Electrical Characteristics
DC Electrical Characteristics (40C
T
A
+85C)
(Continued)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
(Continued)
Parameter
Conditions
Min
Typ
Max
Units
Output Current Levels
D Outputs
Source
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OL
= 1.0V
V
CC
= 2.7V, V
OL
= 0.4V
7
4
10
3.5
mA
mA
mA
mA
Sink (Note 7)
All Others
Source (Weak Pull-Up Mode)
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OL
= 1.0V
V
CC
= 2.7V, V
OL
= 0.4V
V
CC
= 5.5V
10
5
7
4
10
3.5
0.5
μA
μA
mA
mA
mA
mA
μA
mA
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
TRI-STATE Leakage
Allowable Sink Current per Pin
Maximum Input Current without Latchup (Note
5)
RAM Retention Voltage, V
R
(in HALT Mode)
Input Capacitance
Load Capacitance on D2
Voltage on G6 to Force Execution from Boot
ROM (Note 8)
G6 Rise Time to Force Execution from Boot
ROM
Input Current on G6 when Input
>
V
CC
Flash Memory Data Retention
Flash Memory Number of Erase/Write Cycles
+0.5
15
±
200
mA
2.0
V
pF
pF
7
1000
G6 rise time must be slower
than 100 nS
2 x V
CC
V
CC
+ 7
V
100
nS
V
IN
= 11V, V
CC
= 5.5V
25C
See
Table 13
,
Typical Flash
Memory Endurance
500
100
μA
yrs
10
5
cycles
AC Electrical Characteristics (40C
T
A
+85C)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Instruction Cycle Time (t
C
)
Crystal/Resonator
4.5V
V
CC
5.5V
2.7V
V
CC
<
4.5V
See
Table 13
,
Typical
Flash Memory
Endurance
0.5
1.5
DC
DC
μs
μs
Flash Memory Page Erase Time
1
ms
Flash Memory Mass Erase Time
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t
UWS
)
MICROWIRE/PLUS Hold Time (t
UWH
)
MICROWIRE/PLUS Output Propagation
Delay (t
UPD
)
Input Pulse Width
Interrupt Input High Time
Interrupt Input Low Time
8
ms
2
MHz
20
20
ns
ns
150
ns
1
1
t
C
t
C
C
www.national.com
13
相關(guān)PDF資料
PDF描述
COP8SDR9IMTA8 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
COP8SCR9HLQ7 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
COP8SDR9HLQ7 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
COP8SCR9LVA7 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
COP8SDR9LVA7 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
COP8SCR9KMT7 功能描述:IC MCU EEPROM 8BIT 32K 56-TSSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:COP8™ 8S 其它有關(guān)文件:STM32F101T8 View All Specifications 特色產(chǎn)品:STM32 32-bit Cortex MCUs 標(biāo)準(zhǔn)包裝:490 系列:STM32 F1 核心處理器:ARM? Cortex?-M3 芯體尺寸:32-位 速度:36MHz 連通性:I²C,IrDA,LIN,SPI,UART/USART 外圍設(shè)備:DMA,PDR,POR,PVD,PWM,溫度傳感器,WDT 輸入/輸出數(shù):26 程序存儲(chǔ)器容量:64KB(64K x 8) 程序存儲(chǔ)器類(lèi)型:閃存 EEPROM 大小:- RAM 容量:10K x 8 電壓 - 電源 (Vcc/Vdd):2 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 10x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:36-VFQFN,36-VFQFPN 包裝:托盤(pán) 配用:497-10030-ND - STARTER KIT FOR STM32497-8853-ND - BOARD DEMO STM32 UNIV USB-UUSCIKSDKSTM32-PL-ND - KIT IAR KICKSTART STM32 CORTEXM3497-8512-ND - KIT STARTER FOR STM32F10XE MCU497-8505-ND - KIT STARTER FOR STM32F10XE MCU497-8304-ND - KIT STM32 MOTOR DRIVER BLDC497-6438-ND - BOARD EVALUTION FOR STM32 512K497-6289-ND - KIT PERFORMANCE STICK FOR STM32MCBSTM32UME-ND - BOARD EVAL MCBSTM32 + ULINK-MEMCBSTM32U-ND - BOARD EVAL MCBSTM32 + ULINK2更多... 其它名稱(chēng):497-9032STM32F101T8U6-ND
COP8SCR9KMT8 功能描述:IC MCU EEPROM 8BIT 32K 56-TSSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:COP8™ 8S 其它有關(guān)文件:STM32F101T8 View All Specifications 特色產(chǎn)品:STM32 32-bit Cortex MCUs 標(biāo)準(zhǔn)包裝:490 系列:STM32 F1 核心處理器:ARM? Cortex?-M3 芯體尺寸:32-位 速度:36MHz 連通性:I²C,IrDA,LIN,SPI,UART/USART 外圍設(shè)備:DMA,PDR,POR,PVD,PWM,溫度傳感器,WDT 輸入/輸出數(shù):26 程序存儲(chǔ)器容量:64KB(64K x 8) 程序存儲(chǔ)器類(lèi)型:閃存 EEPROM 大小:- RAM 容量:10K x 8 電壓 - 電源 (Vcc/Vdd):2 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 10x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:36-VFQFN,36-VFQFPN 包裝:托盤(pán) 配用:497-10030-ND - STARTER KIT FOR STM32497-8853-ND - BOARD DEMO STM32 UNIV USB-UUSCIKSDKSTM32-PL-ND - KIT IAR KICKSTART STM32 CORTEXM3497-8512-ND - KIT STARTER FOR STM32F10XE MCU497-8505-ND - KIT STARTER FOR STM32F10XE MCU497-8304-ND - KIT STM32 MOTOR DRIVER BLDC497-6438-ND - BOARD EVALUTION FOR STM32 512K497-6289-ND - KIT PERFORMANCE STICK FOR STM32MCBSTM32UME-ND - BOARD EVAL MCBSTM32 + ULINK-MEMCBSTM32U-ND - BOARD EVAL MCBSTM32 + ULINK2更多... 其它名稱(chēng):497-9032STM32F101T8U6-ND
COP8SCR9LVA7 制造商:NSC 制造商全稱(chēng):National Semiconductor 功能描述:8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
COP8SCR9LVA8 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
COP8SCR9LVA8/NOPB 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT