參數(shù)資料
型號: CNY70
廠商: VISHAY SEMICONDUCTORS
元件分類: 線性位移傳感器
英文描述: Position, Linear, Photoelectric Sensor, POSITION, LINEAR SENSOR-DIFFUSE, 0-5mm, 0.30-1mA, SQUARE, THROUGH HOLE MOUNT, 7 X 7 MM, 6 MM HEIGHT, ROHS COMPLIANT, PIN 4
中文描述: Photomicrosensors Reflective Optical Sensor w/Trans Out
文件頁數(shù): 4/11頁
文件大?。?/td> 239K
代理商: CNY70
CNY70
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 30-Jul-12
2
Document Number: 83751
For technical questions, contact: sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
Fig. 1 - Power Dissipation vs. Ambient Temperature
Notes
(1) Measured with the “Kodak neutral test card”, white side with 90 % diffuse reflectance
(2) Measured without reflecting medium
OUTPUT (DETECTOR)
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Power dissipation
Tamb
≤ 25 °C
PV
100
mW
Junction temperature
Tj
100
°C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
0
100
200
300
0
95 11071
P
-
Power
Dissipation
(mW)
Tamb - Ambient Temperature (°C)
IR - diode
Coupled device
Phototransistor
25
50
75
100
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
COUPLER
Collector current
VCE = 5 V, IF = 20 mA,
d = 0.3 mm (figure 1)
IC (2)
0.3
1.0
mA
Cross talk current
VCE = 5 V, IF = 20 mA, (figure 2)
ICX (3)
600
nA
Collector emitter saturation
voltage
IF = 20 mA, IC = 0.1 mA,
d = 0.3 mm (figure 1)
VCEsat (2)
0.3
V
INPUT (EMITTER)
Forward voltage
IF = 50 mA
VF
1.25
1.6
V
Radiant intensity
IF = 50 mA, tp = 20 ms
Ie
7.5
mW/sr
Peak wavelength
IF = 100 mA
λP
940
nm
Virtual source diameter
Method: 63 % encircled energy
d
1.2
mm
OUTPUT (DETECTOR)
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 μA
VECO
5V
Collector dark current
VCE = 20 V, IF = 0 A, E = 0 lx
ICEO
200
nA
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