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參數資料
| 型號： | CNY65 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out |
| 文件頁數： | 2/9頁 |
| 文件大小： | 118K |
| 代理商： | CNY65 |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83540
2
Rev. 2.1, 24-Feb-11
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5V
Forward current
IF
75
mA
Forward surge current
tp 10 μs
IFSM
1.5
A
Power dissipation
Pdiss
120
mW
Junction temperature
Tj
100
°C
OUTPUT
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp 10 ms
ICM
100
mA
Power dissipation
Pdiss
130
mW
Junction temperature
Tj
100
°C
COUPLER
AC isolation test voltage CNY64
t = 1 min
VISO
8200
VRMS
DC isolation test voltage CNY65
t = 1 s
VISO
13.9
kV
DC isolation test voltage CNY66
t = 1 s
VISO
13.9
kV
Total power dissipation
Ptot
250
mW
Ambient temperature range
Tamb
- 55 to + 85
°C
Storage temperature range
Tstg
- 55 to + 100
°C
Soldering temperature
2 mm from case,
10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
1.6
V
Junction capacitance
VR = 0, f = 1 MHz
Cj
50
pF
OUTPUT
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 μA
VECO
7V
Collector emitter leakage current
VCE = 20 V, IF = 0 A
ICEO
200
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
0.3
pF
相關PDF資料 |
PDF描述 |
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| CNY65A | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| CNY65B | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| CNY65EXI | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| CNY64A | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| CNY64B | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CNY65(B)-V | 功能描述:Optoisolator Transistor Output 8200Vrms 1 Channel 4-DIP 制造商:everlight electronics co ltd 系列:- 包裝:管件 零件狀態(tài):有效 通道數:1 電壓 - 隔離:8200Vrms 電流傳輸比（最小值）:100% @ 5mA 電流傳輸比（最大值）:200% @ 5mA 打開 / 關閉時間（典型值）:6μs，7μs 上升/下降時間（典型值）:3μs，5μs 輸入類型:DC 輸出類型:晶體管 電壓 - 輸出（最大值）:80V 電流 - 輸出/通道:50mA 電壓 - 正向（Vf）（典型值）:1.6V 電流 - DC 正向（If）:75mA Vce 飽和值（最大值）:300mV 工作溫度:-55°C ~ 85°C 安裝類型:通孔 封裝/外殼:4-DIP（0.600"，15.24mm） 供應商器件封裝:4-DIP 標準包裝:45 |
| CNY65 | 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| CNY65A | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| CNY65A | 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| CNY65ABST | 功能描述:晶體管輸出光電耦合器 PHOTOTRANSISTOR OUT CTR 80-240% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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