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參數(shù)資料
| 型號(hào)： | CN8550D |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | CN8550D |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SILICON PLANAR EPITAXIAL TRANSISTORS
CN8050 NPN
CN8550 PNP
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation@ T
a
=25oC
Junction Temperature
Storage Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
*P
tot
T
j
T
stg
UNITS
V
V
V
mA
A
mA
mW
oC
oC
THERMAL RESISTANCE
Junction to Ambient in free air
* Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
*R
th (j-a)
K/W
ELECTRICAL CHARACTERISTICS (T
a
=25oC Unless Otherwise Specified)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
DC Current Gain
SYMBOL
V
CEO
V
CBO
V
EBO
h
FE
TEST CONDITION
I
C
=2mA, I
B
=0
I
C
=10
μ
A, I
E
=0
I
E
=100
μ
A, I
C
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
CN8050C/CN8550C
CN8050D/CN8550D
MIN
25
40
6
45
120
120
160
TYP
MAX
UNITS
V
V
V
300
200
300
V
CE
=1V, I
C
=350mA
V
CB
=35V, I
E
= 0
V
BE
=3V, I
C
= 0
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
I
C
=10mA, V
CE
=5V,
f=50MHz
V
CB
=10V, f=1MHz
PNP
NPN
60
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
100
100
0.5
1.2
nA
nA
V
V
Gain Bandwidth Product
f
T
100
MHz
Collector Base Capacitance
C
cbo
35
20
pF
pF
VALUE
25
40
6.0
800
1.0
100
625
150
- 55 to +150
200
IS/ISO 9002
Lic# QSC/L- 000019.3
EBC
Continental Device India Limited
Data Sheet
Page 1 of 3
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