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參數(shù)資料
| 型號(hào)： | CMT01N60GN92 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | 功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 249K |
| 代理商： | CMT01N60GN92 |
CMT01N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2005/12/05
Rev. 1.5
Champion Microelectronic Corporation
Page 2
ORDERING INFORMATION
Part Number
CMT01N60N251
CMT01N60N252
CMT01N60N92
CMT01N60GN251*
CMT01N60GN252*
CMT01N60GN92*
*Note:
G : Suffix for Pb Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
℃
.
Package
TO-251
TO-252
TO-92
TO-251
TO-252
TO-92
CMT01N60
Typ
Characteristic
Symbol
V
(BR)DSS
Min
600
Max
Units
V
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μ
A)
Drain-Source Leakage Current
(V
DS
= 600 V, V
GS
= 0 V)
(V
DS
= 480 V, V
GS
= 0 V, T
J
= 125
℃
)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
A)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 0.6A) *
Forward Transconductance (V
DS
≧
50 V, I
D
= 0.5A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
I
DSS
0.1
0.3
100
mA
I
GSSF
nA
I
GSSR
100
nA
V
GS(th)
2.0
4.0
V
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
8.0
14
0.5
mhos
pF
pF
pF
210
28
4.2
8
21
18
24
8.5
1.8
4
4.5
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
ns
ns
ns
ns
(V
DD
= 300 V, I
D
= 1.0 A,
V
GS
= 10 V,
R
G
= 18
) *
nC
nC
nC
(V
DS
= 400 V, I
D
= 1.0 A,
V
GS
= 10 V)*
nH
L
S
7.5
nH
V
SD
t
on
t
rr
1.5
500
V
ns
ns
**
350
(I
S
= 1.0 A, V
GS
= 0 V,
d
IS
/d
t
= 100A/
μ
s)
* Pulse Test: Pulse Width
≦
300
μ
s, Duty Cycle
≦
2%
** Negligible, Dominated by circuit inductance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CMT01N60N251 | POWER FIELD EFFECT TRANSISTOR |
| CMT01N60N252 | POWER FIELD EFFECT TRANSISTOR |
| CMT01N60N92 | POWER FIELD EFFECT TRANSISTOR |
| CMT02N60 | POWER FIELD EFFECT TRANSISTOR |
| CMT02N60GN220 | POWER FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMT01N60N251 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER FIELD EFFECT TRANSISTOR |
| CMT01N60N252 | 制造商:CHAMP 制造商全稱:CHAMP 功能描述:POWER FIELD EFFECT TRANSISTOR |
| CMT01N60N92 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER FIELD EFFECT TRANSISTOR |
| CMT01N60XN251 | 制造商:CHAMP 制造商全稱:CHAMP 功能描述:POWER FIELD EFFECT TRANSISTOR |
| CMT01N60XN92 | 制造商:CHAMP 制造商全稱:CHAMP 功能描述:POWER FIELD EFFECT TRANSISTOR |
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