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參數(shù)資料
| 型號： | CMM1331-SM |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 12.7 to 13.5 GHz 1.5 Watt Power Amplifier |
| 中文描述： | 12700 MHz - 13500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 6 X 6 MM, SURFACE MOUNT PACKAGE-10 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 416K |
| 代理商： | CMM1331-SM |
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CMM1331-SM
Features
32.0 dBm
(Typ.)
Saturated Output Power
32.0 dB
(Typ.)
Linear Gain
Fully Matched
Unconditionally Stable
Low-Cost Surface Mount Package
Optimum Thermal Dissipation
Applications
Ku-Band VSAT Transmit Subsystems
Description
The CMM1331-SM is a four-stage pHEMT GaAs
MMIC power amplifier that is ideally suited for transmit
subsystems designed for Ku-Band VSAT applications. The
CMM1331-SM provides 32.0 dB linear gain and delivers
1.5 watts of output power at saturation operating from
12.70 to 13.50 GHz frequency.
The unconditional stability and internal matching
provides for reduction of external components making this
product a simple and low-cost solution. The low-cost, 6mm x
6mm x 1.6mm surface mount package offers the same excel-
lent RF and thermal properties as a typical flange package.
12.70 to 13.50 GHz
1.5 Watt Power Amplifier
Advanced Product Specifications
October 2003
(1 of 2)
Pin Functional Diagram
Parameter
Frequency Range
Output Power
Saturated Output Power
Output Power Variation
Linear Gain
Linear Gain Variation
Third Order Intercept Point
Input Reflection Coefficient
Output Reflection Coefficient
Gate Supply Voltage
Drain Current
Power Added Efficiency
Condition
Min
12.70
30.0
31.0
Typ
Max
13.50
Units
GHz
dBm
dBm
dBm
dB
dB
dBm
dB
dB
Volt
mA
%
@ 1dB compression
Pout at Pin = 5.0 dBm
Over operating frequency
31.0
32.0
1.0
32.0
1.5
35.0
2.0
29.0
Over operating frequency
36.0
-10.0
-7.0
-0.9
900
26
Idq = 770 mA
At Saturation
At Saturation
-1.1
-0.7
980
22
Electrical Characteristics
(T = +25°C, Vdd = 7V, Idq = 770mA)
Vdd 1
GROUND 2
RF IN 3
GROUND 4
Vgg 5
10 Vdd
9 GROUND
8 RF OUT
7 GROUND
6 Vgg
C
Maximum Ratings
(TA = -40°C to +75°C) Operation outside these limits can cause permanent damage.
Parameter
Typ
Drain Voltage (+Vdd)
8.5
Gate Voltage (Vgg)
-3.0
Quiescent Current (Idq)
1000
Gate Current (Ig)
5
Units
Volts
Volts
mA
mA
Parameter
RF Input Power (Pin)
Dissipated Power (Pdiss)
Storage Temperature
Operating Backside Temperature
Typ
7.0
7.2
-50 to +150
-40 to +75
Units
dBm
Watts
°C
°C
Parameter
Saturated Output Power
Linear Gain
Stability
Condition
Variation from Room Temperature
Variation from Room Temperature
Min
-0.5
-2.5
Unconditionally stable
Typ
Max
Units
dBm
dB
3.5
Electrical Specifications
(TA = -40°C to +75°C)
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