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參數(shù)資料
| 型號： | CMM1200-BD |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 2.0 to 6.0 GHz GaAs MMIC Low-Noise Amplifer |
| 中文描述： | 2000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 1.60 X 1.55 MM, 0.076 MM HEIGHT, DIE |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 860K |
| 代理商： | CMM1200-BD |
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
2.0 to 6.0 GHz
GaAs MMIC
Low-Noise Amplifier
Advanced Product Information
May 2005 V1.5
(1 of 5)
Features
Small Size: 1.60 x 1.55 x 0.076 mm
Integrated On-Chip Drain Bias Coil
Integrated On-Chip DC Blocking
Single Bias Operation
Directly Cascadable – Fully Matched, Novel
Feedback & Distributed Amplifier Design
P1dB: 15.5 dBm @ 6 GHz, Typ.
High Linear Gain: 17.5 dB Typ.
Noise Figure: 3.3 dB Typ. @ 6 GHz
pHEMT Technology
Silicon Nitride Passivation
Specifications
(TA = 25°C, Vdd = 5V)
1
Parameters
Frequency Range
Linear Gain
Gain Variation (over operating frequency)
Power Output (@1 dB Gain Compression)
P1dB Variation (over operating frequency)
Saturated Output Power
Third Order Intercept Point (@ 6 GHz)
Second Order Intercept Point (@ 6 GHz)
Noise Figure (@6 GHz)
Input Return Loss 2
Output Return Loss 2
Current
Thermal Resistance
Stability
Units
GHz
dB
±dB
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
mA
°C/W
Min
2.0
16.0
Typ
Max
6.0
17.5
2.0
14.0
15.5
1.0
23.0
19.0
25.5
41.0
3.3
3.8
-9.5
-12.0
115
85
100
34.0
Unconditionally Stable
Absolute Maximum Ratings
1
Parameter
Drain Voltage
Drain Current
Continuous Power Dissipation
Input Power
Storage Temperature
Channel Temperature
Operating Backside Temperature
2
Rating
4.5V (min.) / 8.0V (max.)
150 mA
1.2 W
10 dBm
-50°C to +150°C
175°C
-40°C Min.
Die Attach and Bonding Procedures
Die Attach:
Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding:
Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over ther-
mosonic bonding. For thermocompression bonding: Stage
Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding
Tip Pressure: 18 to 40 gms depending on size of wire.
CMM1200-BD
Chip Diagram
Notes: 1. Tested on Celeritek connectorized evaluation board.
2. Measured on wafer.
Notes: 1. Operation outside these limits can cause permanent damage.
2. Calculation maximum operating temperature:
Tmax = 175–(Pdis [W] x 34) [°C].
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