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參數(shù)資料
| 型號： | CMM1110-BD |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier |
| 中文描述： | 2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 2 X 1.10 MM, DIE |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 408K |
| 代理商： | CMM1110-BD |
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
Page 1 of 7
Features
Self Bias Architecture
16.0 dB Small Signal Gain
2.5 dB Noise Figure
+13.0 dBm P1dB Compression Point
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s two stage 2.0-18.0 GHz GaAs MMIC
low noise amplifier has a small signal gain of 16.0 dB
with a noise figure of 2.5 dB across the band. This MMIC
uses Mimix Broadband’s 0.3 μm GaAs PHEMT device
model technology, and is based upon optical beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well
suited for fiber optic, microwave radio, military, space,
telecom infrastructure, test instrumentation and VSAT
applications.
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
mA
Min.
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
9.0
10.0
16.0
+/-1.0
30.0
2.5
+13.0
+31.0
+22.0
+8.0
70
Max.
18.0
-
-
-
-
-
-
-
-
-
+8.5
90
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
110 mA
+20 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Absolute Maximum Ratings
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Second Order Intercept Point (OIP2)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2)
Supply Current (Id) (Vd1,2=8.0V)
CMM1110
May 2006 - Rev 01-May-06
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CMM1110-BD_0705 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:2.0-18.0 GHz GaAs MMIC Low Noise Amplifier |
| CMM1110-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:2.0-18.0 GHz GaAs MMIC Low Noise Amplifier |
| CMM1110-BD-000X | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:2.0-18.0 GHz GaAs MMIC Low Noise Amplifier |
| CMM1118-QT | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-20.0 GHz GaAs MMIC Packaged Driver Amplifier |
| CMM1118-QT_07 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-20.0 GHz GaAs MMIC Packaged Driver Amplifier |
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