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參數(shù)資料
| 型號： | CMLT2207 |
| 英文描述： | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 600MA I(C) | SOT-363VAR |
| 中文描述： | 晶體管|晶體管|一對|互補| 40V的五（巴西）總裁| 600毫安一（c）|的SOT - 363VAR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 78K |
| 代理商： | CMLT2207 |
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2207
type is a dual complementary silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose and
switching applications.
Marking Code is L70.
Complementary Devices include:
1 x 2N2222A NPN Transistor
1 x 2N2907A PNP Transistor
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
NPN (Q1)
75
40
6.0
PNP (Q2)
60
60
5.0
UNITS
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
600
350
TJ,Tstg
Θ
JA
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
CMLT2207
DUAL
COMPLEMENTARY
TRANSISTORS
SOT-563 CASE
Central
Semiconductor Corp.
TM
NPN (Q1)
MIN
-
-
-
-
-
-
-
75
40
6.0
-
-
0.6
-
35
50
75
100
50
40
PNP (Q2)
MIN
-
-
-
-
-
-
-
60
60
5.0
-
-
-
-
75
100
100
100
-
50
SYMBOL
ICBO
ICBO
ICBO
ICBO
IEBO
ICEV
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=60V
VCB=50V
VCB=60V, TA=125°C
VCB=50V, TA=125°C
VEB=3.0V
VCE=60V, VEB(OFF)=3.0V
VCE=30V, VEB(OFF)=500mV
IC=10
μ
A
IC=10mA
IE=10
μ
A
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1.0V, IC=150mA
VCE=10V, IC=500mA
MAX
10
-
10
-
10
10
-
-
-
-
0.3
1.0
1.2
2.0
-
-
-
300
-
-
MAX
-
10
-
10
-
-
50
-
-
-
0.4
1.6
1.3
2.6
-
-
-
300
-
-
UNITS
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
R0 (21-February 2002)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CMLT2222A | TRANSISTOR | BJT | PAIR | NPN | 40V V(BR)CEO | 600MA I(C) | SOT-363VAR |
| CMLT3904 | TRANSISTOR | BJT | PAIR | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-363VAR |
| CMLT3906 | TRANSISTOR | BJT | PAIR | PNP | 40V V(BR)CEO | 200MA I(C) | SOT-363VAR |
| CMLT3946 | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 200MA I(C) | SOT-363VAR |
| CMLT491E | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMLT2207G | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS |
| CMLT2207G TR | 制造商:CENTRAL SEMICONDUCTOR 功能描述:CMLT Series 40 / 60 V 600 mA NPN/PNP PICOmini Dual Silicon Transistor - SOT-563 |
| CMLT2207G TR PBFREE | 制造商:Central Semiconductor Corp 功能描述: |
| CMLT2207TR | 制造商:Central Semiconductor Corp 功能描述:Trans GP BJT NPN/PNP 40V/60V 0.6A 6-Pin SOT-563 T/R |
| CMLT2222A | 功能描述:兩極晶體管 - BJT Dual NPN Small Signl Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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