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參數(shù)資料
| 型號： | CMBTA14 |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 300MA I(C) | TO-236AA |
| 中文描述： | 晶體管|晶體管|達(dá)林頓|叩| 300mA的一（c）|至236AA |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 38K |
| 代理商： | CMBTA14 |
Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
CMBT A 55
max.
max.
max.
max.
max.
A 56
80 V
80 V
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
amb
= 25 °C
Storage temperature
Junction temperature
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
T
stg
T
j
60
60
4
V
mA
mW
° C
° C
500
250
–55 to +150
150
max.
THERMAL CHARACTERISTICS
T
j
= P (R
th j–t
+ R
th t–s
+ R
th s–a
) + T
amb
Thermal resistance
from junction to ambient
R
th j–a
500
K/W
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–I
C
= 1 mA; I
B
= 0
Emitter–base breakdown voltage
–I
C
= 0; I
E
= 100
m
A
Collector cut–off current
–V
CE
= 60 V; I
B
= 0
–V
CB
= 60 V; I
E
= 0
–V
CB
= 80 V; I
E
= 0
Saturation voltages
–I
C
= 100 mA; –I
B
= 10 mA
Base–emitter On voltage
–I
C
= 100 mA; –V
CE
= 1 V
D.C. current gain
–I
C
= 10 mA; –V
CE
= 1 V
–I
C
= 100 mA; –V
CE
= 1 V
Transition frequency at f = 100 MHz
–I
C
= 100 mA; –V
CE
= 1 V
CMBTA 55
A 56
80 V
–V
(BR)CEO
min.
60
–V
(BR)EBO
min.
4
V
–I
CEO
–I
CBO
–I
CBO
max.
max. 0.1
max.
0.1
m
A
m
A
-
0.1
m
A
–V
CEsat
max.
0.25
V
–V
BE(on)
max.
1.2
V
h
FE
h
FE
min.
min.
100
100
f
T
min.
50
MHz
CMBTA55
CMBTA56
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CMBTA55 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTA92 | TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTA93 | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTH10 | BJT |
| CMCPCI102A | CompactPCI Backplane Interface. Replaced with CMCPCI102B. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMBTA42 | 功能描述:兩極晶體管 - BJT Darlington Trans NPN,0.5A,300V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBTA42-T | 功能描述:兩極晶體管 - BJT NPN 0.5A 300V GP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBTA42T/-W | 功能描述:兩極晶體管 - BJT NPN 0.5A 300V GP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBTA43 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON EPITAXIAL TRANSISTORS |
| CMBTA44 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
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