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參數(shù)資料
| 型號： | CMBT6517 |
| 英文描述： | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | TO-236AA |
| 中文描述： | 晶體管|晶體管|叩| 350V五（巴西）總裁| 500mA的一（c）|至236AA |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 38K |
| 代理商： | CMBT6517 |
Continental Device India Limited
Data Sheet
Page 2 of 3
CMBT6517
THERMAL CHARACTERISTICS
T
j
= P (R
th j–t
+ R
th s–a
) + T
amb
Thermal resistance
from junction to ambient
R
th j–a
556
°C/mW
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–I
C
= 1 mA
Collector–base breakdown voltage
–I
C
= 100
m
A
Emitter–base breakdown voltage
–I
E
= 10
m
A
Collector cut–off current
–V
CB
= 250 V
Emitter cut-off current
–V
EB
= 5V
Output capacitance at f = 1 MHz
–V
CB
= 20 V
Input capacitance at f = 1 MHz
–V
EB
= 0.5 V
–V
(BR)CEO
min.
350
V
–V
(BR)CBO
min.
350
V
–V
(BR)EBO
min.
5
V
–I
CBO
max.
50
nA
–I
EBO
max.
50
nA
C
c
max.
5
pF
C
e
max.
80
pF
Saturation voltages
–I
C
= 10 mA; –I
B
= 1 mA
–V
CEsat
–V
BEsat
max.
max.
0.3
0.75
V
V
–I
C
= 20 mA; –I
B
= 2 mA
–V
CEsat
–V
BEsat
max.
max.
0.35
0.85
V
V
–I
C
= 30 mA; –I
B
= 3 mA
–V
CEsat
–V
BEsat
max.
max.
0.5
0.9
V
V
–I
C
= 50 mA; –I
B
= 5 mA
–V
CEsat
max.
1.0
V
D.C. current gain
–I
C
= 1 mA; –V
CE
= 10 V
–I
C
= 10 mA; –V
CE
= 10 V
h
FE
h
FE
min.
min.
20
30
–I
C
= 30 mA; –V
CE
= 10 V
h
FE
min.
max.
30
200
–I
C
= 50 mA; –V
CE
= 10 V
h
FE
min.
max.
20
200
–I
C
= 100 mA; –V
CE
= 10 V
Base emitter voltage
I
C
= 100 mA; V
CE
= 10 V
Transition frequency
I
C
= 10 mA; V
CE
= 20 V; f = 20 MHz
h
FE
min.
15
V
BE(on)
max.
2
V
f
T
min.
max.
40
200
MHz
MHz
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