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參數(shù)資料
| 型號(hào)： | CM900DU-24NF |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Mega Power Dual⑩ IGBTMOD 900 Amperes/1200 Volts |
| 中文描述： | 900 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | CM900DU-24NF |
1
Mega Power Dual
IGBTMOD
900 Amperes/1200 Volts
CM900DU-24NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
High Power UPS
□
Large Motor Drives
□
Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM900DU-24NF is
a 1200V (V
CES
), 900 Ampere
Dual IGBTMOD Power Module.
Current Rating
Amperes
V
CES
Type
Volts (x 50)
CM
900
24
A
D
G
P
(8 PLACES)
L
TC MEASURED POINTS
(THE SIDE OF CU BASEPLATE)
L
M
H
H
H
H
H
H
K
U
H
H
E
F
F
C2E1
E2
C1
G2
E2
G1
E2
C
C2E1
C
G
E
E
G
C1
E1
C2
LABEL
V
S
T
B
U
C
J
J
G
G
R (9 PLACES)
Dimensions
Inches
Millimeters
A
5.91
150.0
B
5.10
129.5
C
1.67
±
0.01
5.41
±
0.01
42.5
±
0.25
137.5
±
0.25
D
E
6.54
166.0
F
2.91
±
0.01
74.0
±
0.25
G
1.65
42.0
H
0.55
14.0
Housing Type (J.S.T MFG. CO. LTD)
S = VHR-2N
T = VHR-5N
Dimensions
Inches
1.50
±
0.01
Millimeters
38.0
±
0.25
J
K
0.16
4.0
L
1.36 +0.04/-0.02 34.6 +1.0/-0.5
M
0.075
±
0.08
1.9
±
0.2
P
0.26
6.5
R
M6 Metric
M6
U
0.62
15.7
V
0.71
18.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM900DU-24NF_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM900DUC-24NF | 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD MPD DUAL 900A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 900A; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:5.9kW; Operating Temperature Min:-40C; Operating Temperature Max:130C 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900DUC-24S | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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