參數(shù)資料
型號: CM75DU-24F
廠商: POWEREX INC
元件分類: IGBT 晶體管
英文描述: Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
中文描述: 75 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 1/4頁
文件大?。?/td> 107K
代理商: CM75DU-24F
1
Trench Gate Design
Dual IGBTMOD
75 Amperes/1200 Volts
CM75DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
A
Inches
3.70
Millimeters
94.0
B
1.89
48.0
C
1.18 +0.04/-0.02 30.0 +1.0/-0.5
D
3.15
±
0.01
80.0
±
0.25
E
0.43
11.0
F
0.16
4.0
G
0.71
18.0
H
0.02
0.5
Dimensions
J
Inches
0.53
Millimeters
13.5
K
0.91
23.0
L
1.13
28.7
M
0.67
17.0
N
0.28
7.0
P
M5
M5
Q
0.2
6 Dia.
6.5
Dia.
R
0.
16
4.0
Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75DU-24F is a
1200V (V
CES
), 75 Ampere Dual
IGBTMOD Power Module.
Current Rating
Amperes
75
V
CES
Type
CM
Volts (x 50)
24
Q (2 PLACES)
C
A
D
B
C
R
K
K
C2E1
E2
C1
H
M
N
E
F
G
F
J
L
E
G
C2E1
RTC
E2
E1
G1
C1
E2
G2
RTC
P - NUTS (3 PLACES)
TC MEASURING
POINT
相關PDF資料
PDF描述
CM75TJ-24F Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts
CM75TU-34KA Six IGBTMOD 75 Amperes/1700 Volts
CM800DU-12H Dual IGBTMOD 800 Amperes/600 Volts
CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE
CM800HA-28H Single IGBTMOD 800 Amperes/1400 Volts
相關代理商/技術參數(shù)
參數(shù)描述
CM75DU-24H 功能描述:IGBT MOD DUAL 1200V 75A U SER RoHS:是 類別:半導體模塊 >> IGBT 系列:IGBTMOD™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B
CM75DU-24H_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM75DY12E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C)
CM75DY-12E 制造商:PRX 功能描述:
CM75DY-12G 制造商:PRX 功能描述: