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參數(shù)資料
| 型號(hào)： | CM45-28 |
| 廠(chǎng)商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-6 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 15K |
| 代理商： | CM45-28 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CBO
I
C
= 50 mA
BV
CEO
I
C
= 50 mA
BV
EBO
I
E
= 20 mA
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60
UNITS
V
33
V
4.0
V
5.0
mA
20
120
---
C
OB
V
CB
= 28 V
f = 1.0 MHz
75
pF
P
G
η
C
V
CC
= 28 V
P
OUT
= 45 W f = 400 MHz
9.0
50
10.0
60
dB
%
NPN SILICON RF POWER TRANSISTOR
CM45-28
PACKAGE STYLE .500”6L FLG
DESCRIPTION:
The
ASI CM45-28
is Designed for
Class A, B and C Power Amplifier VHF
Applications.
P
G
= 7.0 dB Typ at 45 W/400 MHz
∞
Load
VSWR
at Rated Conditions
Omnigold
Metallization System
MAXIMUM RATINGS
I
C
8.0 A
V
CB
60 V
P
DISS
110 W @ T
C
= 25 °C
T
J
-55 °C to +200 °C
T
STG
-55 °C to +200 °C
θ
JC
1.6 °C/W
MINIMUM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.220 / 5.59
.007 / 0.18
.510 / 12.95
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.32
N
M
.120 / 3.05
.135 / 3.43
.150 / 3.43
.160 / 4.06
.125 / 3.18
.090 / 2.29
.105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x N
FULL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.33
.200 / 5.08
C
B
E
E
E
E
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