參數(shù)資料
型號(hào)： CM400DY66H
英文描述： TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
中文描述： 晶體管| IGBT功率模塊|獨(dú)立| 3.3KV五（巴西）國(guó)際消費(fèi)電子展| 800A一（c）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 43K
代理商： CM400DY66H
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM600HU-12H
Units
°
C
°
C
Junction Temperature
T
j
-40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
-40 to 125
Collector-Emitter Voltage (G-E SHORT)
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
±
20
400
Volts
Collector Current (T
c
= 25
°
C)
Peak Collector Current (T
j
≤
150
°
C)
Emitter Current** (T
c
= 25
°
C)
Peak Emitter Current**
Amperes
800*
Amperes
400
Amperes
800*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C)
Mounting Torque, M6 Main Terminal
2800
Watts
1.96~2.94
N · m
Mounting Torque, M6 Mounting
–
1.96~2.94
N · m
Mounting Torque, M4 Terminal
–
0.98~1.47
N · m
Weight
–
400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).s not exceed T
j(max)
rating.
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 40mA, V
CE
= 10V
I
C
= 400A, V
GE
= 15V
I
C
= 400A, V
GE
= 15V, T
j
= 150
°
C
V
CC
= 600V, I
C
= 400A, V
GE
= 15V
I
E
= 400A, V
GE
= 0V
–
–
2.0
mA
Gate Leakage Current
–
–
0.5
μ
A
Gate-Emitter Threshold Voltage
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
–
2.5
3.4**
Volts
–
2.25
–
Volts
Total Gate Charge
Q
G
V
EC
–
2000
–
nC
Emitter-Collector Voltage
–
–
3.4
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
80
nF
Output Capacitance
V
GE
= 0V, V
CE
= 10V
–
–
28
nF
Reverse Transfer Capacitance
–
–
16
nF
Resistive
Turn-on Delay Time
–
–
300
ns
Load
Rise Time
V
CC
= 600V, I
C
= 400A
V
GE1
= V
GE2
= 15V, R
G
= 0.78
–
–
500
ns
Switching
Turn-off Delay Time
–
–
350
ns
Times
Fall Time
–
–
350
ns
Diode Reverse Recovery Time
I
E
= 400A, di
E
/dt = –800A/
μ
s
I
E
= 400A, di
E
/dt = –800A/
μ
s
–
–
250
ns
Diode Reverse Recovery Charge
–
2.97
–
μ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
R
th(j-c)
R
th(c-f)
Per IGBT
–
–
0.045
Thermal Resistance, Junction to Case
Per FWDi
–
–
0.09
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
–
0.040
相關(guān)PDF資料
PDF描述
CM400HA12E TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 400A I(C)
CM400HA24E TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.4KV V(BR)CES | 400A I(C)
CM400HA28 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.4KV V(BR)CES | 400A I(C)
CM400HA-24H HIGH POWER SWITCHING USE INSULATED TYPE
CM400HA-24 Single IGBTMOD 400 Amperes/1200 Volts
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM400DY-66H 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR
CM400E2G-130H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
CM400E3Y6-24NFH 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Chopper IGBTMOD NFH-Series Module 400 Amperes/1200 Volts
CM400E4G-130H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
CM400HA12E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 400A I(C)
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