參數(shù)資料
型號： CM4001
英文描述： Analog IC
中文描述： 模擬IC
文件頁數(shù)： 3/4頁
文件大?。?/td> 43K
代理商： CM4001
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
C
,
OUTPUT (TYPICAL)
0
2
4
6
8
10
480
160
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
320
640
800
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
C
C
,
TRANSFE(TYPICAL)
0
4
8
12
16
20
640
480
320
160
0
800
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
C
S
C
,
SATURATICOLLECTOR-EMITTER
(TYPICAL)
5
0
160
320
480
800
4
3
2
1
0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
640
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
C
S
C
,
COLLECTOR-EMITTER
SATURATION VO(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25°C
I
C
= 160A
I
C
= 800A
I
C
= 400A
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWAR(TYPICAL)
E
E
,
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
i
,
o
,
r
,
CAPA(TYPICAL)
CE
10
-1
10
0
10
2
10
3
10
2
10
1
10
0
V
GE
= 0V
10
1
C
ies
C
oes
C
res
COLLECTOR CURRENT, I
C
, (AMPERES)
S
SWITCHIHALF-BRIDGE
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= ±15V
R
G
= 0.78
T
j
= 125°C
t
f
EMITTER CURRENT, I
E
, (AMPERES)
R
r
,
REVERSE REC(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
2
10
1
10
0
R
r
,
di/dt = -800A/
μ
sec
T
j
= 25°C
GATE CHARGE, Q
G
, (nC)
G
G
,
GATE CHARGE, V
GE
20
0
800
1600
2400
16
12
8
4
0
3200
I
C
= 400A
V
CC
= 600V
V
CC
= 400V
10
3
7
5
3
2
1.0
1.5
2.0
10
2
7
5
3
2
2.5
3.0
3.5
2
T
j
= 25°C
相關(guān)PDF資料
PDF描述
CM400DU-24H TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 400A I(C)
CM400DY66H TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
CM400HA12E TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 400A I(C)
CM400HA24E TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.4KV V(BR)CES | 400A I(C)
CM400HA28 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.4KV V(BR)CES | 400A I(C)
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參數(shù)描述
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