
CM3706
1.5MHz, 600mA
Synchronous
Step-Down Regulator
Thermal Resistance
(Note 3)
:
Package
TSOT23-5
Note 1:
Absolute Maximum Ratings are those values beyond which the life of a device may be impaired.
Note 2:
T
J
is calculated from the ambient temperature T
A
and power dissipation P
D
according to the following formula:
CM3706: T
J
= T
A
+ (P
D
)
╳
(
JA
)
Note 3:
Thermal Resistance is specified with approximately 1 square of 1 oz copper.
ELECTRICAL CHARACTERISTICS
(Unless otherwise stated, these specifications apply T
A
=25
°C
;
VIN=+3.6V)
maximum ratings are stress ratings only and functional device operation is not implied.
2006/12/20
Rev. 1.6
Champion Microelectronic Corporation
Page 4
JA
JC
250
°
C/W
110°C/W
Parameter
Conditions
MIN
TYP
MAX
unit
Input Voltage Range
Input DC Supply Current
2.5
5.5
V
μA
V
FB
=0.5V
270
400
Active Mode
Shutdown Mode
V
FB
=0V, V
IN
=4.2V
T
A
= +25°C
T
A
= 0°C
≤
T
A
≤
85°C
T
A
= -40°C
≤
T
A
≤
85°C
0.08
0.6000 0.6120
0.6000 0.6135
0.6000 0.6150
1.0
μA
V
V
V
0.5880
0.5865
0.5850
Regulated Feedback Voltage
V
FB
Input Bias Current
V
FB
= 0.65V
±30
nA
Reference Voltage Line
Regulation
V
IN
= 2.5V to 5.5V,
CM3706
-1.2, -40°C
≤
T
A
≤
85°C
CM3706
-1.5, -40°C
≤
T
A
≤
85°C
CM3706
-1.8, -40°C
≤
T
A
≤
85°C
VIN = 2.5V to 5.5V,I
OUT
=10mA
I
OUT
from 10 to 600mA
V
IN
=3V, V
FB
=0.5V or V
OUT
=90%
Duty Cycle <35%
V
FB
=0.6V or V
OUT
=100%
I
SW
= 300mA
0.11
0.4
%/V
1.164
1.455
1.746
1.200
1.500
1.800
1.236
1.545
1.854
V
V
V
Regulated Output Voltage
Output Voltage Line
Regulation
Output Voltage Load
Regulation
0.11
0.40
%/V
0.0015
%/mA
Peak Inductor Current
1.2
A
Oscillator Frequency
R
DS(ON)
of P-CH MOSFET
1.2
1.5
0.3
1.8
0.50
MHz
R
DS(ON)
of N-CH MOSFET
I
SW
= -300mA
0.2
0.45
SW Leakage
V
RUN
= 0V, V
SW
= 0V or 5V, V
IN
= 5V
±0.01
±1
μA
RUN Threshold
RUN Leakage Current
Thermal Shutdown Trip
Threshold
Output over voltage lockout
V
OVL
= V
OVL
– V
FB
Note 4:
100% production test at +25°C. Specifications over the temperature range are guaranteed by design and
characterization.
-40°C
≤
T
A
≤
85°C
0.3
0.45
±0.1
1.5
±1
V
μA
150
℃
60
mV