參數(shù)資料
型號： CM350DU-5F
廠商： POWEREX INC
元件分類： IGBT 晶體管
英文描述： Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
中文描述： 350 A, 250 V, N-CHANNEL IGBT
文件頁數(shù)： 2/4頁
文件大小： 46K
代理商： CM350DU-5F
Sep.1998
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM350DU-5F
Units
°
C
°
C
Junction Temperature
T
j
-40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
-40 to 125
Collector-Emitter Voltage (G-E SHORT)
250
Volts
Gate-Emitter Voltage (C-E SHORT)
±
20
Volts
Collector Current (T
c
= 25
°
C)
Peak Collector Current
350
Amperes
700
Amperes
Emitter Current** (T
c
= 25
°
C)
Peak Emitter Current**
350
Amperes
700*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C, T
j
≤
150
°
C)
Mounting Torque, M6 Main Terminal
960
Watts
1.96 ~ 2.94
N · m
Mounting Torque, M6 Mounting
–
1.96 ~ 2.94
N · m
Weight
–
520
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
CES
, V
CE
= 0V
I
C
= 35mA, V
CE
= 10V
I
C
= 350A, V
GE
= 10V, T
j
= 25
°
C
I
C
= 350A, V
GE
= 10V, T
j
= 125
°
C
V
CC
= 100V, I
C
= 350A, V
GE
= 10V
I
E
= 350A, V
GE
= 0V
–
–
1
mA
Gate Leakage Current
–
–
0.5
μ
A
Volts
Gate-Emitter Threshold Voltage
3.0
4.0
5.0
Collector-Emitter Saturation Voltage
–
1.2
1.7
Volts
–
1.10
–
Volts
Total Gate Charge
Q
G
V
EC
–
1320
–
nC
Emitter-Collector Voltage*
–
–
2.0
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
99
nF
Output Capacitance
V
CE
= 10V, V
GE
= 0V
–
–
4.5
nF
Reverse Transfer Capacitance
–
–
3.4
nF
Resistive
Turn-on Delay Time
V
CC
= 100V, I
C
= 350A,
V
GE1
= V
GE2
= 10V,
R
G
= 7.1
, Resistive
Load Switching Operation
–
–
1100
ns
Load
Rise Time
–
–
2400
ns
Switching
Turn-off Delay Time
–
–
900
ns
Times
Fall Time
–
–
500
ns
Diode Reverse Recovery Time
I
E
= 350A, di
E
/dt = -700A/
μ
s
I
E
= 350A, di
E
/dt = -700A/
μ
s
–
–
300
ns
Diode Reverse Recovery Charge
–
5.7
–
μ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
R
th(j-c)
R
th(c-f)
Per IGBT
–
–
0.17
Thermal Resistance, Junction to Case
Per Free-Wheel Diode
–
–
0.28
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
0.010
–
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM350DU-5F_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM35-1.9-01AC 功能描述:TEM 12.19X5.99X1.65MM 制造商:marlow industries, inc. 系列:CM35-1.9 零件狀態(tài):在售 外形尺寸 L x W x H:12.20mm x 6.00mm x 1.65mm 不同 Th 時的 Qmax:5.2W @ 27°C 不同 Th 時的 Delta Tmax:71°C @ 27°C 電流 - 最大值:1.9A 電壓 - 最大值:4.2V 電阻值:1.87 Ohms 工作溫度:85°C 特性:外部金屬化（雙面），引線 標準包裝:20
CM35-1.9-07AC 功能描述:TEM 12.19X5.99X1.65MM 制造商:marlow industries, inc. 系列:CM35-1.9 零件狀態(tài):在售 外形尺寸 L x W x H:12.20mm x 6.00mm x 1.65mm 不同 Th 時的 Qmax:5.2W @ 27°C 不同 Th 時的 Delta Tmax:71°C @ 27°C 電流 - 最大值:1.9A 電壓 - 最大值:4.2V 電阻值:1.87 Ohms 工作溫度:85°C 特性:外部金屬化（雙面），引線 標準包裝:20
CM3511 制造商:CALMIRCO 制造商全稱:California Micro Devices Corp 功能描述:Dual USB Overcurrent Switch 1.2A (VCC) / 200mA (VSBY)
CM3512 制造商:CALMIRCO 制造商全稱:California Micro Devices Corp 功能描述:Dual USB Overcurrent 1.2A Switches with Independent Controls
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