參數(shù)資料
型號(hào): CM30MD3-12H
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
中文描述: 中功率開關(guān)使用平面性基地型,絕緣型
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 135K
代理商: CM30MD3-12H
Feb.1999
MITSUBISHI IGBT MODULES
CM30MD3-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(T
j
= 25
°
C)
INVERTER PART
CONVERTER PART
Note 1. I
E
, V
EC
, t
rr,
Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Thermal resistance is specified under following conditions.
The conductive greese applied, between module and fin.
Al plate is used as fin.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
V
V
1
0.5
2.8
3.0
2.4
0.6
120
300
200
300
2.8
110
1.9
2.4
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 150
°
C
V
CC
= 300V, I
C
= 30A, V
GE
= 15V
V
CC
= 300V, I
C
= 30A
V
GE1
= V
GE2
= 15V
R
G
= 21
Resistive load
I
E
= 30A, V
GE
= 0V
I
E
= 30A, V
GE
= 0V
di
e
/ dt = – 60A /
μ
s
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
mA
μ
A
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
μ
C
°
C/W
°
C/W
2.1
2.15
90
0.08
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note. 1)
t
rr
(Note. 1)
Q
rr
(Note. 1)
R
th(j-f)
Q
(Note. 5)
R
th(j-f)
R
(Note. 5)
Symbol
Parameter
Test conditions
V
GE(th)
V
CE(sat)
Limits
Typ.
Min.
Max.
Unit
6
4.5
7.5
I
C
= 3mA, V
CE
= 10V
I
C
= 30A, V
GE
= 15V
(Note. 4)
V
CE
= 10V
V
GE
= 0V
Repetitive reverse current
Forward voltage drop
Thermal resistance
V
R
= V
RRM
, T
j
= 150
°
C
I
F
= 40A
Per 1/4 module
mA
V
°
C/W
I
RRM
V
FM
R
th(j-f)
(Note. 5)
Symbol
Parameter
Condition
Limits
Typ.
Min.
Max.
Unit
8
1.6
1.7
相關(guān)PDF資料
PDF描述
CM30MD3-12H CI Module Single Phase Converter Three Phase Inverter 30 Amperes/600 Volts
CM30TF-12H 122 x 32 pixel format, LED Backlight available
CM30TF-12H 122 x 32 pixel format, LED Backlight available
CM30TF-24H 122 x 32 pixel format, LED Backlight available
CM30TF-24H 122 x 32 pixel format, LED Backlight available
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM30TF12E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)
CM30TF-12H 功能描述:IGBT MOD 6PAC 600V 30A H SER RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM30TF24E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 30A I(C)
CM30TF-24H 功能描述:IGBT MOD 6PAC 1200V 30A H SER RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM31 制造商:CML 制造商全稱:Chicago Miniature Lamp,inc 功能描述:G-4 1/2 Miniature Bayonet Base