參數(shù)資料
型號: CM30MD1-12H
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
中文描述: 中功率開關使用平面性基地型,絕緣型
文件頁數(shù): 4/5頁
文件大小: 129K
代理商: CM30MD1-12H
Feb.1999
60
50
40
30
20
10
0
20
10
2
0
4
6
8
12 14 16 18
V
CE
= 10V
T
j
= 25
°
C
T
j
= 125
°
C
10
2
7
5
3
2
2
0
0.8
1.6
10
1
7
5
3
2
2.4
3.2
4.0
T
j
= 25
°
C
10
8
6
4
2
0
20
10
2
0
4
6
8
12 14 16 18
9
7
5
3
1
T
j
= 25
°
C
I
C
= 60A
I
C
= 30A
I
C
= 12A
60
50
40
30
20
10
0
10
5
1
0
2
3
4
6
7
8
9
V
GE
=20
(V)
T
j
=25
°
C
9
15
12
11
10
8 7
5
4
3
2
1
0
60
0
10
20
30
40
50
T
j
= 25
°
C
T
j
= 125
°
C
V
GE
= 15V
10
–1
3
5 7
10
0
2 3
5 7
10
1
2 3
2 3
5 7
10
2
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
–2
C
ies
C
oes
V
GE
= 0V
C
res
OUTPUT CHARACTERISTICS
(TYPICAL)
C
C
(
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
C
C
(
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
C
S
C
(
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISITICS
(TYPICAL)
E
E
(
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE VS. V
CE
(TYPICAL)
C
i
,
o
,
r
(
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
C
S
C
(
MITSUBISHI IGBT MODULES
CM30MD1-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
PERFORMANCE CURVES
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