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參數(shù)資料
| 型號(hào)： | CM20TF-24H |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 122 x 32 pixel format, LED Backlight available |
| 中文描述： | 20 A, 1200 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | CM20TF-24H |
Sep.1998
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM20TF-24H
Units
°
C
°
C
Volts
Junction Temperature
T
j
–40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–40 to 125
Collector-Emitter Voltage (G-E SHORT)
1200
Gate-Emitter Voltage (C-E SHORT)
±
20
Volts
Collector Current (T
C
= 25
°
C)
Peak Collector Current
20
Amperes
40*
Amperes
Emitter Current** (T
C
= 25
°
C)
Peak Emitter Current**
20
Amperes
40*
Amperes
Maximum Collector Dissipation (T
C
= 25
°
C, T
j
≤
150
°
C)
Mounting Torque, M5 Mounting
250
Watts
1.47 ~ 1.96
N · m
Weight
–
260
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
*Pulse width and repetition rate should be such that the device junction temperature (T
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 2mA, V
CE
= 10V
I
C
= 20A, V
GE
= 15V
I
C
= 20A, V
GE
= 15V, T
j
= 150
°
C
V
CC
= 600V, I
C
= 20A, V
GE
= 15V
I
E
= 20A, V
GE
= 0V
–
–
1.0
mA
Gate Leakage Current
–
–
0.5
μ
A
Volts
Gate-Emitter Threshold Voltage
4.5
6.0
7.5
Collector-Emitter Saturation Voltage
–
2.5
3.4**
Volts
–
2.25
–
Volts
Total Gate Charge
Q
G
V
EC
–
100
–
nC
Emitter-Collector Voltage
–
–
3.5
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
4
nF
Output Capacitance
V
GE
= 0V, V
CE
= 10V
–
–
1.4
nF
Reverse Transfer Capacitance
–
–
0.8
nF
Resistive
Turn-on Delay Time
–
–
100
ns
Load
Rise Time
V
CC
= 600V, I
C
= 20A,
V
GE1
= V
GE2
= 15V, R
G
= 16
–
–
200
ns
Switching
Turn-off Delay Time
–
–
150
ns
Times
Fall Time
–
–
350
ns
Diode Reverse Recovery Time
I
E
= 20A, di
E
/dt = –40A/
μ
s
I
E
= 20A, di
E
/dt = –40A/
μ
s
–
–
250
ns
Diode Reverse Recovery Charge
–
0.15
–
μ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
R
th(j-c)
R
th(c-f)
Per IGBT
–
–
0.63
Thermal Resistance, Junction to Case
Per FWDi
–
–
1.40
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
–
0.058
MITSUBISHI IGBT MODULES
CM20TF-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
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