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參數(shù)資料
| 型號(hào)： | CM20MD1-12H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
| 中文描述： | 中功率開關(guān)使用平面性基地型，絕緣型 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | CM20MD1-12H |
Feb.1999
MITSUBISHI IGBT MODULES
CM20MD1-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(T
j
= 25
°
C)
INVERTER PART
CONVERTER PART
Note 1. I
E
, V
EC
, t
rr,
Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Thermal resistance is specified under following conditions.
The conductive greese applied, between module and fin.
Al plate is used as fin.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
V
V
1
0.5
2.8
—
2.0
1.5
0.4
—
120
300
200
300
2.8
110
—
2.2
3.1
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 150
°
C
V
CC
= 300V, I
C
= 20A, V
GE
= 15V
V
CC
= 300V, I
C
= 20A
V
GE1
= V
GE2
= 15V
R
G
= 31
Resistive load
I
E
= 20A, V
GE
= 0V
I
E
= 20A, V
GE
= 0V
di
e
/ dt = – 40A /
μ
s
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
mA
μ
A
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
μ
C
°
C/W
°
C/W
—
—
2.1
2.15
—
—
—
60
—
—
—
—
—
—
0.05
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note. 1)
t
rr
(Note. 1)
Q
rr
(Note. 1)
R
th(j-f)
Q
(Note. 5)
R
th(j-f)
R
(Note. 5)
Symbol
Parameter
Test conditions
V
GE(th)
V
CE(sat)
Limits
Typ.
Min.
Max.
Unit
6
4.5
7.5
I
C
= 2mA, V
CE
= 10V
I
C
= 20A, V
GE
= 15V
(Note. 4)
V
CE
= 10V
V
GE
= 0V
Repetitive reverse current
Forward voltage drop
Thermal resistance
V
R
= V
RRM
, T
j
= 150
°
C
I
F
= 20A
Per 1/6 module
mA
V
°
C/W
—
—
—
—
—
—
I
RRM
V
FM
R
th(j-f)
(Note. 5)
Symbol
Parameter
Condition
Limits
Typ.
Min.
Max.
Unit
8
1.5
3.6
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