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參數(shù)資料
| 型號： | CM200TU-5F |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE |
| 中文描述： | 大功率開關(guān)使用 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | CM200TU-5F |
Sep. 2000
MITSUBISHI IGBT MODULES
CM200TU-5F
HIGH POWER SWITCHING USE
1
0.5
1.7
—
55
3.5
1.9
—
600
300
900
500
250
—
2.0
0.21
0.47
—
0.16
mA
μ
A
nF
nC
μ
C
V
°
C/W
—
—
1.2
1.1
—
—
—
1500
—
—
—
—
—
10.0
—
—
—
0.09
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
V
V
ns
3.0
5.0
ns
250
±
20
200
400
200
400
600
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
680
V
V
W
°
C
°
C
V
N m
N m
g
A
A
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
CES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 100V, I
C
= 200A, V
GE
= 10V
V
CC
= 100V, I
C
= 200A
V
GE1
= V
GE2
= 10V
R
G
= 13
, Inductive load switching operation
I
E
= 200A
I
E
= 200A, V
GE
= 0V
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compoundapplied
*2
(1/6 module)
Tc measured point is just under the chips
I
C
= 20mA, V
CE
= 10V
I
C
= 200A, V
GE
= 10V
V
CE
= 10V
V
GE
= 0V
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
*3
Note 1. I
E
, V
EC
, t
rr
, Q
rr
and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
Gate-emitter threshold voltage
Collector to emitter saturation voltage
Thermal resistance
*1
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (
Note 1
)
Q
rr (
Note 1
)
V
EC(
Note 1
)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c’)
Q
Symbol
Parameter
V
GE(th)
V
CE(sat)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
T
C
= 25
°
C
Pulse
T
C
= 25
°
C
Pulse
T
C
= 25
°
C
(Note 2)
(Note 2)
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
Symbol
V
CES
V
GES
I
C
I
CM
I
E (
Note 1
)
I
EM (
Note 1
)
P
C (
Note 3
)
T
j
T
stg
V
iso
Parameter
Collector current
Emitter current
Torque strength
Unit
Ratings
—
Unit
Typ.
Limits
Min.
Max.
—
MAXIMUM RATINGS
(Tj = 25
°
C)
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Test conditions
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