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參數(shù)資料
| 型號： | CM1800HC-34H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE |
| 中文描述： | 大功率開關使用 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | CM1800HC-34H |
PRELIMINARY
Some parametric limits are subject to change.
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
V
V
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 850V, I
C
= 1800A, V
GE
= 15V
V
CC
= 850V, I
C
= 1800A
V
GE1
= V
GE2
= 15V
R
G
= 0.3
Resistive load switching operation
I
E
= 1800A, V
GE
= 0V
I
E
= 1800A,
die / dt = –5100A /
μ
s
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
I
C
= 180mA, V
CE
= 10V
I
C
= 1800A, V
GE
= 15V
(Note 4)
V
CE
= 10V
V
GE
= 0V
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
2. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
V
GE
= 0V
V
CE
= 0V
DC, T
C
= 85
°
C
Pulse
(Note 1)
Pulse
T
C
= 25
°
C, IGBT part
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Collector current
Emitter current
1700
±
20
1800
3600
1800
3600
15600
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
MAXIMUM RATINGS
(Tj = 25
°
C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E
(Note 2)
I
EM
(Note 2)
P
C
(Note 3)
T
j
T
stg
V
iso
Item
Conditions
Unit
V
V
A
A
A
A
W
°
C
°
C
V
N·m
N·m
N·m
kg
Ratings
—
—
Min
—
Typ
—
Max
32
0.5
—
—
—
—
—
—
1.60
2.00
2.70
0.80
—
2.70
—
0.008
0.013
—
mA
μ
A
nF
nF
nF
μ
C
μ
s
μ
s
μ
s
μ
s
V
μ
s
μ
C
K/W
K/W
K/W
—
2.40
2.95
168
21.0
8.4
15.4
—
—
—
—
2.50
—
700
—
—
0.006
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC
(Note 2)
t
rr
(Note 2)
Q
rr
(Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
Item
Conditions
V
GE(th)
V
CE(sat)
Limits
Unit
5.5
4.5
6.5
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CM1800HC-34H_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1800HC-34H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1800HC-34N | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM1800HC-34N_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1800HCB-34N | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Single IGBTMOD HVIGBT Module 1800 Amperes/1700 Volts |
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