參數(shù)資料
型號： CM150E3U-24H
廠商： POWEREX INC
元件分類： IGBT 晶體管
英文描述： Chopper IGBTMOD 150 Amperes/1200 Volts
中文描述： 150 A, 1200 V, N-CHANNEL IGBT
文件頁數(shù)： 3/4頁
文件大小： 43K
代理商： CM150E3U-24H
Sep.1998
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c)
R
th(c-f)
Per IGBT
–
–
0.14
Thermal Resistance, Junction to Case
Per FWDi
–
–
0.24
Thermal Resistance, Junction to Case
Clamp Diode Part
–
–
0.24
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
0.020
–
MITSUBISHI IGBT MODULES
CM150E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
C
,
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
200
100
50
0
V
GE
= 20V
12
11
8
T
j
= 25
o
C
150
250
300
10
9
15
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
C
,
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
200
100
50
0
150
250
300
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
C
S
C
,
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
0
50
100
150
250
200
4
3
2
1
0
300
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
S
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T
j
= 25°C
0
4
8
12
16
20
8
6
4
2
0
I
C
= 60A
I
C
= 300A
I
C
= 150A
1.0
1.5
2.0
2.5
3.0
3.5
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
E
E
,
T
j
= 25°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
i
,
o
,
r
,
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
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相關代理商/技術參數(shù)
參數(shù)描述
CM150E3U-24H_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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