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參數(shù)資料
| 型號： | CM1200HA-66H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 53K |
| 代理商： | CM1200HA-66H |
PRELIMINARY
Some parametric limits are subject to change.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Aug.1998
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS
(Tj = 25
°
C)
Collector current
Emitter current
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
3300
±
20
1200
2400
1200
2400
10420
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 8.24
2.84 ~ 3.43
0.88 ~ 1.08
2.2
V
V
A
A
A
A
W
°
C
°
C
V
N·m
N·m
N·m
kg
G-E Short
C-E Short
T
C
= 25
°
C
Pulse
T
C
= 25
°
C
Pulse
T
C
= 25
°
C
(Note 2)
(Note 2)
Main terminal to Base, AC for 1 minute
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Symbol
V
CES
V
GES
I
C
I
CM
I
E
(Note 1)
I
EM
(Note 1)
P
C
(Note 3)
T
j
T
stg
V
iso
Parameter
Conditions
Unit
Ratings
—
—
V
V
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 1650V, I
C
= 1200A, V
GE
= 15V
V
CC
= 1650V, I
C
= 1200A
V
GE1
= V
GE2
= 15V
R
G
= 2.5
Resistive load switching operation
I
E
= 1200A, V
GE
= 0V
I
E
= 1200A
die / dt = –2400A /
μ
s
IGBT part
FWDi part
Case to fin, conductive grease applied
I
C
= 120mA, V
CE
= 10V
I
C
= 1200A, V
GE
= 15V (Note 4)
V
CE
= 10V
V
GE
= 0V
15
0.5
5.72
—
—
—
—
—
1.60
2.00
2.50
1.00
4.29
1.20
—
0.012
0.024
—
mA
μ
A
nF
nF
nF
μ
C
μ
s
μ
s
μ
s
μ
s
V
μ
s
μ
C
°
C/W
°
C/W
°
C/W
—
—
4.40
4.80
130
7
3
10
—
—
—
—
3.30
—
300
—
—
0.006
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.0
4.5
7.5
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
Note 1. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Min
Typ
Max
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC
(Note 1)
t
rr
(Note 1)
Q
rr
(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
Symbol
Parameter
Test conditions
V
GE(th)
V
CE(sat)
Limits
Unit
Thermal resistance
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM1200HA-66H_03 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HB50H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 2.5KV V(BR)CES | 2.4KA I(C) |
| CM1200HB-50H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HB-50H_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HB66H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 3.3KV V(BR)CES | 1.2KA I(C) |
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