參數(shù)資料
型號(hào)： CM10MD-12H
廠商： POWEREX INC
元件分類： IGBT 晶體管
英文描述： CIB Module Three Phase Converter Three Phase Inverter Brake 10 Amperes/600 Volts
中文描述： 10 A, 600 V, N-CHANNEL IGBT
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 158K
代理商： CM10MD-12H
Feb.1999
ELECTRICAL CHARACTERISTICS
(T
j
= 25
°
C)
INVERTER PART
BRAKE PART
CONVERTER PART
Note 1. I
E
, V
EC
, t
rr,
Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Thermal resistance is specified under following conditions.
The conductive greese applied, between module and fin.
Al plate is used as fin.
MITSUBISHI IGBT MODULES
CM10MD-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
V
V
1
0.5
2.8
—
1.0
0.9
0.2
—
120
300
200
300
2.8
110
—
3.5
4
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 150
°
C
V
CC
= 300V, I
C
= 10A, V
GE
= 15V
V
CC
= 300V, I
C
= 10A
V
GE1
= V
GE2
= 15V
R
G
= 63
Resistive load
I
E
= 10A, V
GE
= 0V
I
E
= 10A, V
GE
= 0V
di
e
/ dt = – 20A /
μ
s
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
mA
μ
A
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
μ
C
°
C/W
°
C/W
—
—
2.1
2.15
—
—
—
30
—
—
—
—
—
—
0.03
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note. 1)
t
rr
(Note. 1)
Q
rr
(Note. 1)
R
th(j-f)
Q
(Note. 5)
R
th(j-f)
R
(Note. 5)
Symbol
Parameter
Test conditions
V
GE(th)
V
CE(sat)
Limits
Typ.
Min.
Max.
Unit
6
4.5
7.5
I
C
= 1mA, V
CE
= 10V
I
C
= 10A, V
GE
= 15V
(Note. 4)
V
CE
= 10V
V
GE
= 0V
Min.
—
Typ.
—
Max.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-to-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
V
V
1
0.5
2.8
—
1
0.9
0.2
—
1.5
3.5
3.6
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 150
°
C
V
CC
= 300V, I
C
= 10A, V
GE
= 15V
I
F
= 10A, Clamp diode part
IGBT part
Clamp diode part
I
C
= 1mA, V
CE
= 10V
I
C
= 10A, V
GE
= 15V
(Note. 4)
V
CE
= 10V
V
GE
= 0V
mA
μ
A
nF
nF
nF
nC
V
°
C/W
°
C/W
—
2.1
2.15
—
—
—
30
—
—
—
—
—
—
—
—
—
—
—
—
—
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
V
FM
R
th(j-f)
Q
(Note. 5)
R
th(j-f)
R
(Note. 5)
Symbol
Parameter
Condition
V
GE(th)
V
CE(sat)
Limits
Unit
6
4.5
7.5
Repetitive reverse current
Forward voltage drop
Thermal resistance
V
R
= V
RRM
, T
j
= 150
°
C
I
F
= 10A
Per 1/6 module
mA
V
°
C/W
—
—
—
—
—
—
I
RRM
V
FM
R
th(j-f)
(Note. 5)
Symbol
Parameter
Condition
Limits
Typ.
Min.
Max.
Unit
8
1.5
3.6
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