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參數(shù)資料
| 型號： | CM100TU-24H |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Six IGBTMOD 100 Amperes/1200 Volts |
| 中文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | CM100TU-24H |
Sep.1998
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM100TU-24H
Units
°
C
°
C
Junction Temperature
T
j
-40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
-40 to 125
Collector-Emitter Voltage (G-E SHORT)
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
±
20
Volts
Collector Current (T
c
= 25
°
C)
Peak Collector Current (T
j
≤
150
°
C)
Emitter Current**
100
Amperes
200*
Amperes
100
Amperes
Peak Emitter Current**
200*
Amperes
Maximum Collector Dissipation (T
j
< 150
°
C)
Mounting Torque, M5 Main Terminal
650
Watts
2.5~3.5
N · m
Mounting Torque, M5 Mounting
–
2.5~3.5
N · m
Weight
–
680
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V, T
j
= 25
°
C
I
C
= 100A, V
GE
= 15V, T
j
= 125
°
C
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
I
E
= 100A, V
GE
= 0V
–
–
1
mA
Gate Leakage Voltage
–
–
0.5
μ
A
Volts
Gate-Emitter Threshold Voltage
4.5
6
7.5
Collector-Emitter Saturation Voltage
–
2.9
3.7
Volts
–
2.85
–
Volts
Total Gate Charge
Q
G
V
EC
–
375
–
nC
Emitter-Collector Voltage*
–
–
3.2
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
15
nF
Output Capacitance
V
CE
= 10V, V
GE
= 0V
–
–
5
nF
Reverse Transfer Capacitance
–
–
3
nF
Resistive
Turn-on Delay Time
V
CC
= 600V, I
C
= 100A,
V
GE1
= V
GE2
= 15V,
R
G
= 3.1
, Resistive
Load Switching Operation
–
–
100
ns
Load
Rise Time
–
–
200
ns
Switch
Turn-off Delay Time
–
–
300
ns
Times
Fall Time
–
–
350
ns
Diode Reverse Recovery Time
I
E
= 100A, di
E
/dt = -200A/
μ
s
I
E
= 100A, di
E
/dt = -200A/
μ
s
–
–
300
μ
C
μ
C
Diode Reverse Recovery Charge
–
0.55
–
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Per IGBT 1/6 Module
–
–
0.19
Thermal Resistance, Junction to Case
Per Free-Wheel Diode 1/6 Module
–
–
0.35
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
0.015
–
MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
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