參數(shù)資料
型號(hào): CM100TU-24F
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE
中文描述: 大功率開關(guān)使用
文件頁數(shù): 3/4頁
文件大?。?/td> 80K
代理商: CM100TU-24F
Aug. 1999
MITSUBISHI IGBT MODULES
CM100TU-24F
HIGH POWER SWITCHING USE
V
GE
= 20V
T
j
= 25
°
C
15
11
10
9.5
9
8.5
8
200
100
180
160
140
120
80
60
40
20
00
0.5
1
1.5
2
2.5
3
3.5
4
3
2.5
2
1.5
0.5
1
00
120
160
40
80
200
T
j
= 25
°
C
T
j
= 125
°
C
V
GE
= 15V
10
0
10
1
10
2
10
3
2
3
5
7
2
3
5
7
2
3
5
7
0.5
1
1.5
2
2.5
3
3.5
T
j
= 25
°
C
5
4
3
2
1
0
20
6
8
12
16
10
14
18
I
C
= 200A
I
C
= 100A
I
C
= 40A
T
j
= 25
°
C
10
–1
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
V
GE
= 0V
C
ies
C
oes
C
res
10
1
10
2
5
7
10
3
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
0
Conditions:
V
CC
= 600V
V
GE
=
±
15V
R
G
= 3.1
T
j
= 125
°
C
Inductive load
2
3
t
d(off)
t
d(on)
t
r
t
f
OUTPUT CHARACTERISTICS
(TYPICAL)
C
C
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
C
S
C
(
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
E
E
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
C
i
,
o
,
r
(
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
C
S
C
(
S
COLLECTOR CURRENT I
C
(A)
PERFORMANCE CURVES
相關(guān)PDF資料
PDF描述
CM100TU-24F Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE
CM100TU-24H Six IGBTMOD 100 Amperes/1200 Volts
CM1084SCN263 5.0 AMP POSITIVE VOLTAGE REGULATOR
CM1084CN263 5.0 AMP POSITIVE VOLTAGE REGULATOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM100TU-24F_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE
CM100TU-24H 功能描述:IGBT MOD 6PAC 1200V 100A U SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM100TU-24H_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM100TU-24H_12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
CM100TX-24S 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX 6-PAC 100A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX-SERIES 6-PAC 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR