參數(shù)資料
型號(hào): CM100TU-12F
廠商: POWEREX INC
元件分類: IGBT 晶體管
英文描述: 240 x 128 pixel format, CFL Backlight with power harness
中文描述: 100 A, 600 V, N-CHANNEL IGBT
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 82K
代理商: CM100TU-12F
Aug. 1999
MITSUBISHI IGBT MODULES
CM100TU-12F
HIGH POWER SWITCHING USE
40
80
120
160
200
00
0.5
1
1.5
2
2.5
3
3.5
4
15
11
10
9
7.5
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
0
0.5
1
1.5
2
2.5
3
3.5
4
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
2.5
3
2
1.5
1
0.5
0
160
200
0
40
80
120
5
4
3
2
1
06
8
10
12
14
16
18
20
10
0
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
2
3
5
7
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
T
j
=25
°
C
V
GE
=20V
9.5
8.5
8
T
j
= 25
°
C
T
j
= 125
°
C
V
GE
= 15V
I
C
= 200A
I
C
= 100A
I
C
= 40A
T
j
= 25
°
C
V
GE
= 0V
C
res
C
oes
C
ies
V
CC
= 300V
V
GE
=
±
15V
R
G
= 6.3
T
j
= 125
°
C
Conditions:
t
d(off)
t
d(on)
t
f
t
r
T
j
= 25
°
C
OUTPUT CHARACTERISTICS
(TYPICAL)
C
C
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
C
S
C
(
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
E
E
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
C
i
,
o
,
r
(
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
C
S
C
(
S
COLLECTOR CURRENT I
C
(A)
PERFORMANCE CURVES
相關(guān)PDF資料
PDF描述
CM100TU-12H 240 x 128 pixel format, CFL Backlight with power harness
CM100TU-12H 240 x 128 pixel format, CFL Backlight with power harness
CM100TU-24F HIGH POWER SWITCHING USE
CM100TU-24F Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE
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