參數(shù)資料
型號(hào): CM100TF-28H
廠商: POWEREX INC
元件分類: IGBT 晶體管
英文描述: 122 x 32 pixel format, LED Backlight available
中文描述: 100 A, 1400 V, N-CHANNEL IGBT
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 53K
代理商: CM100TF-28H
Sep.1998
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
C
,
OUTPUT (TYPICAL)
0
2
4
6
8
10
120
40
0
V
GE
= 20V
15
13
12
11
8
7
T
j
= 25
o
C
80
160
200
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
C
C
,
TRANSFE(TYPICAL)
0
4
8
12
16
20
160
120
80
40
0
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
200
COLLECTOR-CURRENT, I
C
, (AMPERES)
C
S
C
,
SATURATICOLL(TYPICAL)
5
0
40
80
120
160
4
3
2
1
0
200
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
COLLECTOR CURRENT, I
C
, (AMPERES)
10
4
10
0
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 800V
V
GE
= ±15V
R
G
= 3.1
T
j
= 125°C
t
f
S
SWITCHIH(TYPICAL)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
C
S
C
,
SATURATICOLL(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25°C
I
C
= 40A
I
C
= 200A
I
C
= 100A
1.0
1.5
2.0
2.5
3.5
3.0
4.0
10
0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FORFRE(TYPICAL)
10
2
10
3
E
E
,
T
j
= 25°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
i
,
o
,
r
,
CAPA(TYPICAL)
CE
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
GATE CHARGE, Q
G
, (nC)
G
G
,
GATE CHARGE, V
GE
20
0
200
400
16
12
8
4
0
600
800
V
CC
= 800V
V
CC
= 600V
I
C
= 100A
EMITTER CURRENT, I
E
, (AMPERES)
R
r
,
REVERSE REC(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
rr
I
rr
di/dt = -200A/
μ
sec
T
j
= 25°C
10
2
10
1
10
0
R
r
,
MITSUBISHI IGBT MODULES
CM100TF-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
相關(guān)PDF資料
PDF描述
CM100TU-12F 240 x 128 pixel format, CFL Backlight with power harness
CM100TU-12F 240 x 128 pixel format, CFL Backlight with power harness
CM100TU-12H 240 x 128 pixel format, CFL Backlight with power harness
CM100TU-12H 240 x 128 pixel format, CFL Backlight with power harness
CM100TU-24F HIGH POWER SWITCHING USE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM100TJ-12F 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Trench Gate Design 100 Amperes/600 Volts
CM100TJ-24F 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
CM100TL-12NF 功能描述:IGBT MOD 6PAC 600V 100A NF SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM100TL-12NF_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM100TL-24NF 功能描述:IGBT MOD 6PAC 1200V 100A NF SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B