參數(shù)資料
型號： CM100E3Y24E
英文描述： TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 100A I(C)
中文描述： 晶體管| IGBT功率模塊|獨立| 1.2KV五（巴西）國際消費電子展| 100號A一（c）
文件頁數(shù)： 2/4頁
文件大?。?/td> 93K
代理商： CM100E3Y24E
Mar.2003
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
V
CC
= 600V, I
C
= 100A
V
GE1
= V
GE2
= 15V
R
G
= 3.1
, Inductive load switching operation
I
E
= 100A
I
E
= 100A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
*2
(1/2 module)
Tc measured point is just under the chips
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
1200
±
20
100
200
100
200
650
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM100DY-24NF
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
°
C
°
C
V
N m
N m
g
1
0.5
2.5
—
23
2
0.45
—
120
80
450
350
150
—
3.2
0.19
0.35
—
0.13
*3
31
mA
μ
A
nF
nF
nF
nC
ns
ns
ns
ns
ns
μ
C
V
°
C/W
°
C/W
°
C/W
°
C/W
—
—
1.8
2.0
—
—
—
675
—
—
—
—
—
5.0
—
—
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
7
V
V
6
8
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
*
1 : Tc measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : Tc’ measured point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
*1
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (
Note 1
)
Q
rr (
Note 1
)
V
EC(
Note 1
)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c’)
Q
R
G
Symbol
Parameter
V
GE(th)
V
CE(sat)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, T
C
’ = 113
°
C
*3
Pulse
(Note 2)
Pulse
T
C
= 25
°
C
(Note 2)
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Symbol
V
CES
V
GES
I
C
I
CM
I
E (
Note 1
)
I
EM (
Note 1
)
P
C (
Note 3
)
T
j
T
stg
V
iso
—
—
—
Parameter
Collector current
Emitter current
Torque strength
Conditions
Unit
Ratings
Unit
Typ.
Limits
Min.
Max.
MAXIMUM RATINGS
(Tj = 25
°
C)
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Test conditions
相關(guān)PDF資料
PDF描述
CM100TF12E TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C)
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CM100TF28H TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.4KV V(BR)CES | 100A I(C)
CM100DY-24NF HIGH POWER SWITCHING USE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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