參數(shù)資料
型號: CM100E3Y12E
英文描述: TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 100A I(C)
中文描述: 晶體管| IGBT功率模塊|獨(dú)立| 600V的五(巴西)國際消費(fèi)電子展| 100號A一(c)
文件頁數(shù): 4/4頁
文件大小: 93K
代理商: CM100E3Y12E
Mar.2003
MITSUBISHI IGBT MODULES
CM100DY-24NF
HIGH POWER SWITCHING USE
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
R
r
(
R
r
(
Conditions:
V
CC
= 600V
V
GE
=
±
15V
R
G
= 3.1
T
j
= 25
°
C
Inductive load
10
3
10
5
10
4
10
0
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
3
2 3 57
2 3 57
2 3 57
2 3 57
10
1
10
2
10
1
10
0
10
3
10
3
5
3
2
10
2
5
3
2
10
1
2 3 57
2 3 57
Single Pulse
T
C
= 25
°
C
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
N
T
t
c
TMIE (s)
IGBT part:
Per unit base =
R
th(j
c)
= 0.19
°
C/W
FWDi part:
Per unit base =
R
th(j
c)
= 0.35
°
C/W
0
4
8
16
12
20
0
400
200
800
1000
600
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
G
G
(
GATE CHARGE Q
G
(nC)
V
CC
= 600V
V
CC
= 400V
I
C
= 100A
相關(guān)PDF資料
PDF描述
CM100E3Y24E TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 100A I(C)
CM100TF12E TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C)
CM100TF12H TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C)
CM100TF28H TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.4KV V(BR)CES | 100A I(C)
CM100DY-24NF HIGH POWER SWITCHING USE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM100E3Y24E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 100A I(C)
CM100E3Y-24E 制造商:n/a 功能描述:IGBT Module
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CM100FW 制造商:Cooper Bussmann 功能描述:BS camaster white A3 fuseholder,100A
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