參數(shù)資料
型號(hào)： CM1000HA-24H
廠商： POWEREX INC
元件分類： IGBT 晶體管
英文描述： Single IGBTMOD 1000 Amperes/1200 Volts
中文描述： 1000 A, 1200 V, N-CHANNEL IGBT
文件頁數(shù)： 2/4頁
文件大?。?/td> 49K
代理商： CM1000HA-24H
Sep.1998
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM1000HA-24H
Units
°
C
°
C
Junction Temperature
T
j
–40 to +150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–40 to +125
Collector-Emitter Voltage (G-E SHORT)
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
±
20
1000
Volts
Collector Current (T
C
= 25
°
C)
Peak Collector Current (T
j
≤
150
°
C)
Emitter Current** (T
C
= 25
°
C)
Peak Emitter Current**
Amperes
2000*
Amperes
1000
Amperes
2000*
Amperes
Maximum Collector Dissipation (T
C
= 25
°
C)
Mounting Torque, M8 Main Terminal
5800
Watts
8.83 ~ 10.8
N · m
Mounting, Torque M6 Mounting
–
1.96 ~ 2.94
N · m
Mounting, Torque M4 Terminal
–
0.98 ~ 1.47
N · m
Weight
–
1600
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrma
*Pulse width and repetition rate should be such that the device junction temperature (T
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 100mA, V
CE
= 10V
I
C
= 1000A, V
GE
= 15V
I
C
= 1000A, V
GE
= 15V, T
j
= 150
°
C
V
CC
= 600V, I
C
= 1000A, V
GE
= 15V
I
E
= 1000A, V
GE
= 0V
–
–
6
mA
Gate Leakage Current
–
–
0.5
μ
A
Gate-Emitter Threshold Voltage
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
–
2.7
3.6**
Volts
–
2.4
–
Volts
Total Gate Charge
Q
G
V
EC
–
5000
–
nC
Emitter-Collector Voltage
–
–
3.5
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
200
nF
Output Capacitance
V
GE
= 0V, V
CE
= 10V
–
–
70
nF
Reverse Transfer Capacitance
–
–
40
nF
Resistive
Turn-on Delay Time
–
–
600
ns
Load
Rise Time
V
CC
= 600V, I
C
= 1000A,
V
GE1
= V
GE2
= 15V, R
G
= 3.3
–
–
1500
ns
Switching
Turn-off Delay Time
–
–
1200
ns
Time
Fall Time
–
–
350
ns
Diode Reverse Recovery Time
I
E
= 1000A, di
E
/dt = –2000A/
μ
s
I
E
= 1000A, di
E
/dt = –2000A/
μ
s
–
–
250
ns
Diode Reverse Recovery Charge
–
7.4
–
μ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
R
th(j-c)
R
th(c-f)
Per IGBT
–
–
0.022
Thermal Resistance, Junction to Case
Per FWDi
–
–
0.050
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
–
0.018
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