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參數(shù)資料
| 型號： | cly 2 |
| 廠商： | SIEMENS AG |
| 英文描述： | GaAs MMIC(砷化鎵微波放大器) |
| 中文描述： | 砷化鎵微波單片集成電路（砷化鎵微波放大器） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 63K |
| 代理商： | CLY 2 |
CLY 2
Data Book
2
03.00
Electrical Characteristics
T
A
= 25
°
C, unless otherwise specified.
Characteristics
Symbol
Limit Values
Unit Test Conditions
min.
typ.
max.
Drain-source
saturation current
I
DSS
300
450
650
mA
V
DS
= 3 V,
V
GS
= 0 V
Drain-source pinch-
off current
I
D(p)
–
5
50
μ
A
V
DS
= 3 V,
V
GS
= – 3.8 V
Gate pinch-off current
I
G(p)
Pinch-off Voltage
–
5
20
μ
A
V
DS
= 3 V,
V
GS
= – 3.8 V
V
DS
= 3 V,
I
D
= 50
μ
A
V
DS
= 3 V,
I
D
= 180 mA,
f
= 1.8 GHz,
P
in
= – 5 dBm
V
DS
= 3 V,
I
D
= 180 mA,
f
= 1.8 GHz,
P
in
= – 5 dBm
dBm
V
DS
= 3 V,
I
D
= 180 mA
f
= 1.8 GHz,
P
in
= 10 dBm
dBm
V
DS
= 3 V,
I
D
= 180 mA,
f
= 1.8 GHz
V
GS(p)
G
– 3.8 – 2.8 – 1.8
V
Small Signal Gain
1)
–
15.5
–
dB
Small Signal Gain
2)
G
–
14.5
–
dB
Output Power
P
o
22.5
23.5
–
1 dB-Compression
Point
P
1 dB
–
23.5
–
1 dB-Compression
Point
P
1 dB
–
27.0
–
dBm
V
DS
= 5 V,
I
D
= 180 mA,
f
= 1.8 GHz
Power Added
Efficiency
PAE
–
55
–
%
V
DS
= 3 V,
I
D
= 180 mA,
f
= 1.8 GHz,
P
in
= 10 dBm
V
DS
= 3 V,
I
D
= 180 mA,
f
= 1.8 GHz
Noise figure
NF
–
1.48
–
dB
1)
Matching conditions for maximum small signal gain (not identical with power matching conditions!).
Power matching conditions:
f
= 1.8 GHz; Source Match:
G
ms
: MAG = 0.74, ANG 132
°
; Load Match:
G
ml
: MAG
0.61, ANG – 153
°
.
2)
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