參數(shù)資料
型號(hào): CLX34
廠商: INFINEON TECHNOLOGIES AG
英文描述: HiRel X-Band GaAs Power-MESFET
中文描述: 伊雷爾X波段砷化鎵功率場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 636K
代理商: CLX34
CLX34
S emiconductor Group
4 of 10
Draft D, S eptember 99
Electrical Characteristics
(continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Linear power gain
1)
V
DS
= 8 V, I
D
= 600 mA, f = 2.3 GHz,
P
in
= 11 dBm
G
lp
dB
CLX34-00
13.5
14.5
-
CLX34-05
14.0
15.0
-
CLX34-10
14.0
15.0
-
Power output at 1dB gain compr.
1)
V
DS
= 8 V, I
D(RF off)
= 600 mA, f = 2.3 GHz
P
1dB
dBm
CLX34-00
-
33.2
-
CLX34-05
-
34.0
-
CLX34-10
-
34.5
-
Output Power
1)
V
DS
= 8 V, I
D(RF off)
= 600 mA, f = 2.3 GHz,
P
in
= 21.0 dBm
P
out
dBm
CLX34-00
32.7
33.2
-
CLX34-05
33.7
34.0
-
CLX34-10
34.2
34.5
-
Power added efficiency
1), 2)
V
DS
= 8 V, I
D(RF off)
= 600 mA, f = 2.3 GHz,
P
in
= 21.0 dBm
PAE
%
CLX34-00
42
47
-
CLX34-05
44
51
-
CLX34-10
46
53
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P
RFout
- P
RFin
) / P
DC
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